4H-SiC (0001) metal–oxide–semiconductor fieldeffect transistors (MOSFETs) with a 3-D gate structure, which has a top channel on the (0001) face and side-wall channels on the {112̄0} face, have been fabricated. The 3-D gate structures with a 1–5-μm width and a 0.8-μm height have been formed by reactive ion etching, and the gate oxide has been deposited by plasma-enhanced chemical vapor deposition...

The influence of diamond like carbon films properties on quantum efficiency of prepared transmission photocathodes has been investigated. DLC films were deposited on silicon substrate and stainless steel mesh by PECVD using methane, argon and hydrogen or deuterium gas mixtures. Photocathodes prepared with deuterated DLC film have higher quantum efficiency than photocathodes prepared with hydrog...

Silicon nanocrystals embedded in a silicon-rich silicon oxide matrix doped with Er ions have been fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. Indirect excitation of erbium photoluminescence via silicon nanocrystals has been investigated. Temperature quenching of the photoluminescence originating from the silicon nanocrystals and the erbium ions has been...

The influence of change in deposition conditions of silane concentration and substrate temperature on optical properties of hydrogenated microcrystalline silicon thin film samples prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) technique, are investigated. The crystalline volume fraction for the samples determined from Raman spectra are correlated with the silane concentration, su...

Amorphous C/diamond films have been prepared by rf plasma enhanced vapor deposition from a CHdAr gas mixture. Infrared and optical-ultraviolet absorption characteristics are reported and used to characterize the bonding and optical properties of these films. It has been found that the optical band gap is not related to the hydrogen content in the films and varies according to the dc self bias d...

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Using real-time spectroscopic ellipsometry the evolution of the surface roughness of amorphous silicon thin films grown by low-temperature 200 °C plasma-enhanced chemical vapor deposition PECVD at high process gas pressure 3 mTorr has been studied as a function of the hydrogen dilution gas-flow ratio RH = H2 / SiH4 with 15 RH 60. To describe the roughness evolution, we have used a 3D linearized...

Further information on electronic properties, like trapped carrier density, for hydrogenated microcrystalline and polymorphous silicon thin films prepared by hot-wire chemical vapor deposition (HWCVD) and plasma-enhanced chemical vapor deposition (PECVD) techniques can be deduced from the experimental data of the high electric field dependence of the coefficient β in the steady-state photocarri...

Plasmaand water-assisted oxide-oxide thermocompression direct bonding for a self-assembly based multichip-to-wafer (MCtW) 3D integration approach was demonstrated. The bonding yields and bonding strengths of the self-assembled chips obtained by the MCtW direct bonding technology were evaluated. In this study, chemical mechanical polish (CMP)-treated oxide formed by plasma-enhanced chemical vapo...

The determination of the crystalline volume fraction from the Raman spectra of microcrystalline silicon involves the knowledge of a material parameter called the Raman emission cross-section ratio y. This value is still debated in the literature. In the present work, the determination of y has been carried out on the basis of quantitative analysis of medium-resolution transmission electron micr...