نتایج جستجو برای: plane strain

تعداد نتایج: 333248  

2015
Y. Zheng W. Sun

This paper describes a new approach which can be used to interpret the experimental creep deformation data obtained from miniaturized thin plate bending specimen test to the corresponding uniaxial data based on an inversed application of the reference stress method. The geometry of the thin plate is fully defined by the span of the support, l, the width, b, and the thickness, d. Firstly, analyt...

2006
Yoon Suk Choi Anthony D. Rollett Henry R. Piehler

A two-point orientation auto-correlation function (TP-OACF) was developed in order to quantify the spatial distribution of targeted texture components. An example of a TP-OACF was demonstrated using an idealized orientation map. Characteristics of the spatial distribution of major texture components in 6022-T4 Al sheets deformed in plane-strain tension were also quantified using a TP-OACF. The ...

2013
Mahdi Ghorbani-Asl Nourdine Zibouche Mohammad Wahiduzzaman Augusto F. Oliveira Agnieszka Kuc Thomas Heine

The transition-metal dichalcogenides (TMD) MoS₂ and WS₂ show remarkable electromechanical properties. Strain modifies the direct band gap into an indirect one, and substantial strain even induces an semiconductor-metal transition. Providing strain through mechanical contacts is difficult for TMD monolayers, but state-of-the-art for TMD nanotubes. We show using density-functional theory that sim...

2017
Jingjing Zhao Yehao Deng Haotong Wei Xiaopeng Zheng Zhenhua Yu Yuchuan Shao Jeffrey E Shield Jinsong Huang

Organic-inorganic hybrid perovskite (OIHP) solar cells have achieved comparable efficiencies to those of commercial solar cells, although their instability hinders their commercialization. Although encapsulation techniques have been developed to protect OIHP solar cells from external stimuli such as moisture, oxygen, and ultraviolet light, understanding of the origin of the intrinsic instabilit...

Journal: :Materials for quantum technology 2022

Abstract Strain is extensively used to controllably tailor the electronic properties of materials. In context indirect band-gap semiconductors such as silicon, strain lifts valley degeneracy six conduction band minima, and by extension states electrons bound phosphorus donors. Here, single atoms are embedded in an engineered thin layer silicon strained 0.8% their wave function imaged using spat...

The problem of several finite moving cracks in a functionally graded material is solved by dislocation technique under the condition of anti-plane deformation. By using the Fourier transform the stress fields are obtained for a functionally graded strip containing a screw dislocation. The stress components reveal the familiar Cauchy singularity at the location of dislocation. The solution is em...

E. Zeighami, H. Rahami, M. Mirhosseini, S. Sepehrnia,

The finite element method (FEM) can be applied to practically analyze the tall buildings in which the shear walls are used to resist the lateral loads. Accordingly, a variety of displacement and strain-based as well as frame macro elements have been proposed for analysis of the tall buildings. With respect to application of the lower order plane stress elements, analytical problems may arise wi...

Journal: :Nano letters 2014
Yinghui Sun Kai Liu Xiaoping Hong Michelle Chen Jonghwan Kim Sufei Shi Junqiao Wu Alex Zettl Feng Wang

Interactions between metal and atomically thin two-dimensional (2D) materials can exhibit interesting physical behaviors that are of both fundamental interests and technological importance. In addition to forming a metal–semiconductor Schottky junction that is critical for electrical transport, metal deposited on 2D layered materials can also generate a local mechanical strain. We investigate t...

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