نتایج جستجو برای: piezoelectric semiconductor

تعداد نتایج: 74511  

Journal: :The Review of scientific instruments 2007
Dongwoo Kang Moon G Lee Daegab Gweon

Many application areas such as semiconductor manufacture, precision optics alignment, and microbiological cell manipulation require ultraprecision positioning systems with a high positioning resolution and large motion range. This article describes the development of a compact high precision linear piezoelectric stepping positioner for precision alignment of optical elements. The positioner is ...

2001
I. D. Baikie A. van Silfhout

This article describes a new type of in situ ultrahigh-vacuum compatible kelvin probe based on a voice-coil driving mechanism. This design exhibits several advantages over conventional mechanical feed-through and (in situ) piezoelectric devices in regard to the possibility of multiple probe geometry, flexibility of probe geometry, amplitude of oscillation, and pure paranel vibration. Automatic ...

2014
Y. C. Jiang J. Gao

Traditionally, strain effect was mainly considered in the materials with periodic lattice structure, and was thought to be very weak in amorphous semiconductors. Here, we investigate the effects of strain in films of cobalt-doped amorphous carbon (Co-C) grown on 0.7PbMg(1/3)Nb(2/3)O3-0.3PbTiO3 (PMN-PT) substrates. The electric transport properties of the Co-C films were effectively modulated by...

2013
N. Bouchenak Khelladi N. E. Chabane Sari

ZnO is an important II-VI semiconductor material for devices with possible applications such as piezoelectric transducers, gas sensors, transparent electronic in solar cell, saw devices. Based on known research, ZnO is the most promising in optoelectronic and optical applications, especially in UV region. An understanding of the optical properties of ZnO thin film on different substrates is als...

Journal: :Lab on a chip 2011
James T Kirk Gina E Fridley Jeffrey W Chamberlain Elijah D Christensen Michael Hochberg Daniel M Ratner

The transformative potential of silicon photonics for chip-scale biosensing is limited primarily by the inability to selectively functionalize and exploit the extraordinary density of integrated optical devices on this platform. Silicon biosensors, such as the microring resonator, can be routinely fabricated to occupy a footprint of less than 50 × 50 µm; however, chemically addressing individua...

2011
Tao Li Yogesh B. Gianchandani

Metal alloys have material properties that are very appealing for micro electro mechanical systems (MEMS), but present a challenge for process integration within a lithographic manufacturing sequence of the type used in the semiconductor industry. The batch-mode micro electrodischarge machining (μEDM) discussed here uses lithographically-fabricated electrode arrays with high density and high un...

2015
Jae-Won Park Jae-Hung Han

a r t i c l e i n f o a b s t r a c t A shunted piezoelectric is a device to suppress vibration consisting of a piezoelectric material and a shunt circuit connecting between two electrodes of the piezoelectric material. The sensitivity of damping performances is analyzed for passive shunted piezoelectrics: a resistive, a series resonant, and a parallel resonant shunted piezoelectric. The parame...

M Hamedi, O Zargar R Hosseini,

Vibration energy harvesting with piezoelectric materials currently generate up to 300 microwatts per cm2, using it to be mooted as an appropriate method of energy harvesting for powering low-power electronics. One of the important problems in bimorph piezoelectric energy harvesting is the generation of the highest power with the lowest weight. In this paper the effect of the shape and geometry ...

S Golabi S Jafari Fesharaki, S.Gh Madani

This article has studied the effect of ratio of stiffness and thickness between piezoelectric actuators and host plat has been explored on optimal pattern for placement of piezoelectric work pieces around a hole in thin isotropic plate under static loading to reduce stress concentration. The piezoelectric actuators reduce directly or indirectly the stress concentration by applying positive and ...

Journal: :Nano letters 2012
Youfan Hu Yan Zhang Long Lin Yong Ding Guang Zhu Zhong Lin Wang

We present that the electroluminescence (EL) properties of Mg-doped p-type GaN thin films can be tuned by the piezo-phototronic effect via adjusting the minority carrier injection efficiency at the metal-semiconductor (M-S) interface by strain induced polarization charges. The device is a metal-semiconductor-metal structure of indium tin oxide (ITO)-GaN-ITO. Under different straining conditions...

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