This paper present the electron charge pumping technique using the various charge pumps circuits for interface trap density and edge leakage reduction that is major concern in GAA short channel nanowire structure. Latched and bootstrap charge pump circuit has been simulated and analyzed for GAA structure. The charge pumping technique requires body contact of FET which has been implemented for G...

Due to the extraordinary large surface-to-volume ratio, surface effects on semiconductor nanowires have been extensively investigated in recent years for various technological applications. Here, we present a facile interface trapping approach to alter electronic transport properties of GaAs nanowires as a function of diameter utilizing the acceptor-like defect states located between the intrin...

Aligned GaN nanowire arrays have high potentials for applications in future electronic and optoelectronic devices. In this study, the growth of GaN nanowire arrays with high degree of vertical alignment was attempted by plasma-enhanced CVD on the c-plane GaN substrate. We found that the lattice matching between the substrate and the nanowire is essential for the growth of vertically aligned GaN...

Silicon nanowires were synthesized, in a controlled manner, for their practical integration into devices. Gold colloids were used for nanowire synthesis by the vapor-liquid-solid growth mechanism. Using SiCl4 as the precursor gas in a chemical vapor deposition system, nanowire arrays were grown vertically aligned with respect to the substrate. By manipulating the colloid deposition on the subst...

Graphene is promising as a transparent, flexible, and possibly cost-effective substrate for nanowire-based devices. We have investigated Au-seeded III-V nanowire growth with graphite as a model substrate. The highest yield of undoped vertical nanowires was found for InAs, but we also observed vertical nanowires for the InP, GaP, and GaAs materials. The yield of vertical nanowires for GaP and Ga...

We present detailed first-principles calculations of the electron-conduction properties of a three-sodium-atom nanowire suspended between semi-infinite crystalline Na(001) electrodes during its elongation. Our investigations reveal that the conductance is ∼ 1 G0 before the nanowire breaks and only one channel with the characteristic of the 3s orbital of the center atom in the nanowire contribut...

As an outstanding member in the oxide nanowire family, ZnO nanowire is widely studied for its optical, semiconductive, and piezoelectric properties. PbZrxTi1–xO3 (PZT), usually in the form of polycrystalline thin films, is known for its high piezoelectric coefficient and is an ideal material as actuator. In this review, we first briefly introduce the rational growth of ZnO and PZT nanowire arra...

Chiral surface plasmon polaritons (SPPs) can be generated by linearly polarized light incident at the end of a nanowire, exciting a coherent superposition of three specific nanowire waveguide modes. Images of chiral SPPs on individual nanowires obtained from quantum dot fluorescence excited by the SPP evanescent field reveal the chirality predicted in our theoretical model. The handedness and s...

Nanowire plasmons can be launched by illumination at one terminus of the nanowire and emission can be detected at the other end of the wire. Using polarization dependent dark-field scattering spectroscopy, we measure how the polarization of the emitted light depends on the polarization of the incident light. We observe that the shape of the nanowire termination plays an important role in determ...

The ordered tin disulfide (SnS(2)) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS(2) nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrate the SnS(2) nanowire is hexagonal polycrystalli...