نتایج جستجو برای: nitride aluminum
تعداد نتایج: 64159 فیلتر نتایج به سال:
In this work, the Al-rich AIN thin film is deposited on Si substrate by radio frequency (RF) sputtering to form a metal-insulator-semiconductor (MIS) structure. Al nanocrystals (nc-Al) are formed and embedded in the AIN thin film. Charge trapping/detrapping in the nc-Al leads to a shift in the flat-band voltage (VFB) of the MIS structure. The charge storage ability of the AIN thin films contain...
We report the results of a vacuum ultraviolet (VIJV) study of single crystal and polycrystalline AlN over the range 4-40 eV and compare these with theoretical optical properties calculated from first principles using an orthogonalized linear combination of atomic orbit& in the local density approximation. The electronic structure of AIN has a two-dimensional (2D) character indicated by logarith...
Dedication To my parents, Gary and Carol, and to my loving girlfriend Connie. v Acknowledgements I would like to express my gratitude to my supervising, Professor Joe C. Campbell, for showing me the exciting world of nitride-based optoelectronic devices. His wise advice and constant support has been the most important aspect of my research, inspiring all of the work I have accomplished. Joe Cam...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید