The room-temperature (300 K) electronic structure of pulsed laser deposited $\mathrm{La}{\mathrm{Ni}}_{x}{\mathrm{V}}_{1\ensuremath{-}x}{\mathrm{O}}_{3}$ thin films has been demonstrated. substitution early-transition metal (TM) V in $\mathrm{LaV}{\mathrm{O}}_{3}$ with late-TM Ni leads to the decreasing out-of-plane lattice parameter. Doping does not alter formal valence state and films, divulg...

Abstract This experiment addressed the effect of Nickel-doped on dielectric, ac conductivity, and optical properties pure doped Zn (1−x) Ni x O (x = 0, 3 6%) nanostructures. The un-doped Ni-doped ZnO nanostructures were synthesized using co-precipitation. In this paper, frequency-dependent dielectric electrical conductivity examined at various temperatures ranging from 320 K to 460 an LCR meter...

We report the fabrication process, material and electrical characterizations of ultra thin body (UTB) thin film transistors (TFTs) by using nickel (Ni)-based self-aligned silicidation (SAS) process. The resulting polysilicon film, after a chemical mechanical process (CMP), is about 13 nm thick with approximately 1019 cm-3 body doping. Root mean square (RMS) surface roughness below 1 nm is achie...

The kinetics of hydrogen absorption by magnesium bulk is affected by two main activated processes: the dissociation of the H2 molecule and the diffusion of atomic H into the bulk. In order to have fast absorption kinetics both activated processed need to have a low barrier. Here we report a systematic ab-initio density functional theory investigation of H2 dissociation and subsequent atomic H d...

Due to potential applications of semiconductor transition doped nanostructure materials and the important advantages of synthesis in cost-effective and environmental concerns, a significant effort has been consummated for improvement of Ni-doped SnO(2) nanomaterials using hydrothermal technique at room conditions. The structural and optical properties of the low-dimensional (average diameter, 5...

The room-temperature (300 K) electronic structure of pulsed laser deposited $\mathrm{La}{\mathrm{Ni}}_{x}{\mathrm{V}}_{1\ensuremath{-}x}{\mathrm{O}}_{3}$ thin films has been demonstrated. substitution early-transition metal (TM) V in $\mathrm{LaV}{\mathrm{O}}_{3}$ with late-TM Ni leads to the decreasing out-of-plane lattice parameter. Doping does not alter formal valence state and films, divulg...

Abstract Tetra-doping by (Mn, Fe, Co, Ni) ions strongly boosted the room temperature dielectric constant and ferromagnetic-superparamagnetic characteristics of monoclinic CuO structure. In this study, undoped CuO, Cu 0.98 Mn 0.005 Fe Co Ni O, 0.96 0.01 O 0.94 0.015 nanocompositions were synthesized through coprecipitation technique. The crystal structure analysis verified that all samples have ...

Antiferromagnetic order is a common and robust ground state in the parent (undoped) phase of several strongly correlated electron systems. The progressive weakening antiferromagnetic correlations upon doping paves way for variety emergent many-electron phenomena including unconventional superconductivity, colossal magnetoresistance, collective charge-spin-orbital ordering. In this study, we exp...