Sustained exponential growth of complex electronic systems will require new breakthroughs in fabrication and assembly with controlled engineering of nanoscale components. In this article, we describe an emerging class of transistors whose channels are made from semiconducting carbon nanomaterials. These nanomaterials come in two forms: carbon nanotubes (CNTs), and graphene nanoribbons (GNRs). T...

Novel metal oxide semiconductor field effect transistor (MOSFET) architectures aimed at sub IV operation with enhanced current driving capability are reported. In our design, the planar channel region in a conventional MOSFET is replaced by an array of isolated Si wires. Directional metal coverage of the two sidewalls and the top surface of each Si wire help achieve enhanced gate control. Sub I...

Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arse...

In this paper, we propose multi-fin FET design techniques targeted for RF applications. Overlap and underlap design configuration in a base FinFET are compared first and then multi-fin device (consisting of transistor unit up to 50) is studied to develop design limitations and to evaluate their effects on the device performance. We have also investigated the impact of the number of fins (up to ...

Quantum-dot cellular automata (QCA) is a novel, current-free approach to computing at the nanoscale, which, if realized in computing devices, will have broad-reaching effects in the electronics industry. First, the concept of QCA is outlined. Next, personal research topics are proposed, to include the development of theoretical quantum-dynamic models of switching QCA cells; the development of a...

Continued advances in silicon technology have enabled the VLSI industry to shrink the area of the transistor by roughly a factor of two with each successive technology node. This trend has continued unabated for the past five decades and has made personal computing devices ubiquitous in modern culture. Made possible by continuous advances in CMOS technology and fueled by a growing and fiercely ...

We employ a novel multi-configurational selfconsistent Green’s function approach (MCSCG) for the simulation of nanoscale Schottky-barrier field-effect transistors. This approach allows to calculate the electronic transport with a seamless transition from the single-electron regime to room temperature field-effect transistor operation. The particular improvement of the MCSCG stems from a divisio...

Conventional CMOS technology's performance deteriorates due to increased short channel effects. Double-gate (DG) FinFETs has better short channel effects performance compared to the conventional CMOS and stimulates technology scaling. The main drawback of using CMOS transistors are high power consumption and high leakage current. Fin-type field-effect transistors (FinFETs) are promising substit...

The organic thin-film transistor (OTFT) is now a mature device that has developed tremendously during the last twenty years. The aim of this paper is to update previous reviews on that matter that have been published in the past. The operating mode of OTFTs is analyzed in view of recent model development. This mainly concerns the distribution of charges in the conducting channel and problems co...

A model for the simulation of the electron energy distribution in nanoscale metal–oxide–semiconductor field-effect transistor (MOSFET) devices, using a kinetic simulation technique, is implemented. The convective scheme (CS), a method of characteristics, is an accurate method of solving the Boltzmann transport equation, a nonlinear integrodifferential equation, for the distribution of electrons...