In this paper, we compare a new 1.2 kV rated 4H-SiC split-gate (SG) MOSFET with the conventional planar-gate (PG) MOSFETs. Both structures were fabricated same design rules and process platform. Therefore, have similar electrical parameters, such as ON-state drain-source resistance (RON), breakdown voltage (BV), threshold (Vth), body diode forward (VSD). It is shown that Ciss/Coss/Crss capacita...

The accuracy of a MOSFET dosimetry system with respect to peripheral therapeutic doses from high-energy X-rays has been evaluated. The results have been compared with ionisation chamber measurements in the same peripheral regions of the beam. For 6 MV and 18 MV X-ray beams, the MOSFET system in the high-sensitivity mode produces reproducibility of dose measurement with relative standard deviati...

VHDL-AMS (IEEE 1076.1-1999), an extension to the VHDL, is considered to be a unified language for digital analog, mixed-signal modeling [1],[2]. Although traditionally AMS language is commonly used for behavioral modeling, in this paper special emphasis is given to modeling of mosfet based devices at switch level. We have analyzed VHDL-AMS for switch level modeling on basis of accuracy and resp...

Silicon VDMOS power MOSFET technology is being supplanted by UMOS (or trench) power MOSFET technology. Designers of spaceborne power electronics systems incorporating this newer power MOSFET technology need to be aware of several unique threats that this technology may encounter in space. Space radiation threats to UMOS power devices include vulnerabilities to SEB, SEGR, and microdose. There ha...

The split-C(V) technique has served during three decades for independent extraction of the inversion and accumulation charge in MOSFETs from the direct measurement of the gate-to-channel capacitance [1]. The total charge, Q, obtained from the integration of the gateto-channel capacitance curves, can be used for the evaluation of the carrier mobility using the standard MOSFET equations (μ α ID/Q...

The key to successfully applying the SiC MOSFET requires an understanding of the device’s unique operating characteristics. In this section, the characteristics of Cree’s 1200V 80mΩ SiC MOSFET (CMF20120D) will be discussed. Comparisons will be made with other similar silicon devices along with application implications. The intention of this comparison is to illustrate the differences in operati...

A correlation between the gated-diode R-G current and the performance degradation of SOI n-channel MOS transistor after F-N stress test has been demonstrated in this paper. Due to increase of interface traps after F-N stress test, the generation-recombination (R-G) current of the gateddiode in the SOI-MOSFET architecture increases while the performance characteristics of MOSFET transistor such ...

The device design of future nanoscale MOSFETs is reviewed. Major challenges in the design of the nanometer MOSFETs and the possible solutions are discussed. In this paper, special emphasis is placed on the combination of new transistor structures that suppress the short channel effect and on back-gate voltage control that suppresses the characteristics variations. Two new device architectures, ...

This paper present an extensive review of homogeneously doped Junctionless Cylindrical Gate All Around (JL-CGAA) MOSFET using numerical simulations to look into deep physical insight of the device. The electrical and analog/RF performance has been investigated. The JL-C-GAA FET is more immune to short channel effect than the devices having p-n junctions. It also offers steeper subthreshold slop...

A macromodel for precise SPICE simulations of high-voltage power MOSFET is presented. The macromodel takes into account basic features of these devices as higher value of the resistance between channel and drain and lower current level though the body diode compared to low-voltage power MOSFET. It also considers that high-voltage power MOSFET work mostly in saturation regime. All required param...