The electrodeposition of crystalline Si films on graphite substrates was investigated in KF–KCl molten salts at 1073 K. optimum K2SiF6 concentration and current density to obtain adherent, compact, smooth were using surface cross-sectional scanning electron microscopy. crystallinity the deposited measured by X-ray diffraction backscatter techniques. By photoelectrochemical measurements CH3CN–TB...

Single crys ta l semiconductors (n-Si, p-Si , n -GaAs , p -GaAs , n -GaP, n-In.P, and n -CdS) were coated wi th n t y p e TiO~ by a chemical vapor deposi t ion technique, and the e lec t ron and hole t r ans fe r proper t ies across the he te ro junct ion so produced were invest igated. The qua l i ty of the deposi ted TiO~ film depended upon severa l factors inc luding t empe ra tu r e and sub...

Cu2O is a p-type direct bandgap semiconductor with band gap of 2~2.2 eV, which has excellent visible light absorption and utilization. However, slow charge transfer poor stability hinder its practical application. In this paper, facile electrodeposition approach successfully synthesized the heterostructure p-Cu2O n-Cu2O. The protective layer n-Cu2O on surface nanoparticles forms p/n heterojunct...

A number of different approaches have been used in the stabilization of small band gap n-type semiconductors against photocorrosion in photoelectrochemical (PEC) cells. Such stabilization is necessary in the design of practical cells for conversion of solar energy to electricity, and is of critical importance in photoelectrosynthetic systems where the photogenerated holes produce species (e.g. ...

Despite the increasing interest in graphene, a less studied aspect is enhancement of silicon (Si) performances due to interaction with graphene-based materials. In this study, cyclic voltammetry and electric impedance measurements are performed on graphene oxide (GO) dip-coated n-type p-type Si samples. The electrical properties GO samples dramatically enhanced: conductivity photocurrent meanin...

In contemporary research, “Heterostructure” assemblies play an important role in energy conversion systems, wherein the composite assemblies facilitate faster charge carrier transport across the material interfaces. The improved/enhanced efficiency metrics in these systems (electro/photo-electrochemical processes/devices) is due to synergistic interaction and synchronized charge transport a...

Oxide semiconductors have attracted revived interest for complementary metal–oxide–semiconductor (CMOS) back-end-of-line (BEOL) compatible devices monolithic 3-dimensional (3D) integration. To obtain a high-quality oxide/semiconductor interface and bulk semiconductor, it is critical to enhance the performance of oxide semiconductor transistors. Atomic layer-deposited (ALD) indium (In 2 O 3 ) ha...

The use of a p-type inorganic semiconductor to form a nanorod scaffold within a polymer-fullerene bulk heterojunction solar cell is reported. The performance of this cell is compared to those made of the commonly used n-type scaffold of ZnO, which has been reported many times in the literature. The scaffold is designed to improve charge-carrier collection by increased mobility in thicker sample...