This work presents the analysis of radiated EMI problems associated with DC-DC buck converters and the solutions for minimize the reverse recovery of the Drain-Bulk diode of the synchronous switching MOSFET. The DC-DC buck converter topology is used in computers and telecom applications because of its high power efficiency and multiple DC levels. For reducing the reverse recovery and its relate...

We experimentally evaluated the proton beam dose reproducibility, sensitivity, angular dependence and depth-dose relationships for a new Metal Oxide Semiconductor Field Effect Transistor (MOSFET) detector. The detector was fabricated with a thinner oxide layer and was operated at high-bias voltages. In order to accurately measure dose distributions, we developed a practical method for correctin...

• Lambert-W function-based MOSFET parameter extraction down to cryogenic temperature. modeling of drain current characteristics using classical mobility law 4.2 K. Main FDSOI parameters extracted versus temperature and gate length. Mobility degradation at short channel length due increased neutral defect scattering. The applicability the methodology is demonstrated for 28 nm MOSFETs deep temper...

This paper describes the detection principle of a hydrogen peroxide sensor based on the electrolyte metal oxide semiconductor field effect transistor (MOSFET) and possibilities of using different types of redox materials as the gate material for the sensor with respect to the sensitivity and detection limit. After discussing the fundamentals of hydrogen peroxide detection and a short descriptio...

Lifetime estimation of power semiconductor devices have been widely investigated to improve the reliability and reduce cost maintenance converters. However in most reported work, aging effect is not considered lifetime evaluation process due omission or limitation thermal cycle counting method. Additionally, electrical/thermal simulation are usually implemented different simulators/platforms, f...

A novel method for direct extraction of deep-submicron MOSFET effective channel length is proposed, which requires only a single measurement of the “critical-current at linear-threshold” (“Icrit @ Vt0”) based on the maximum-gm definition. With a simple calibration of the channel sheet resistance from the long-channel Icrit data, the effective channel length of any short-channel device on the sa...

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In this supplement to formal class lectures, we develop the small signal models for metaloxide-semiconductor field-effect transistor (MOSFET) technologies. Despite the exclusive focus on MOS technologies, the reader will surmise that the fundamental concepts and strategies of small signal modeling presented herewith are generally applicable to bipolar, III-V compound, and other semiconductor de...