Abstract In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c -plane ScAlMgO 4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to suppress island and achieve uniform mirror-like Ga-polar layers. The time have impact the crystalline quality GaN. also show thin...

Abstract Regarding deep-ultraviolet optical device applications, face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) is a promising alternative to the conventional metalorganic vapor phase epitaxy (MOVPE)-prepared templates on sapphire substrates. However, FFA Sp-AlN tends exhibit AlGaN growth-related hillock generation and surface morphology deterioration. In this study, we optimized sput...

Scanning electron microscopy was used to study of the initial stages formation a semipolar GaN(1122) layer during Metalorganic Chemical Vapor Deposition on Si(113) substrates, surface which U-shaped grooves with element sizes <100 nm (NP-Si(113)) were formed. It found that NP-Si(113) substrates buffer AlN stimulate islands faceted by planes m-GaN, c-GaN. is shown there predominant growth...

In this paper, we demonstrate the direct epitaxial growth of c-plane GaN on a preheated (−2 0 1) β-Ga2O3 single-crystal substrate with no interlayer or pre-patterning processes by using atmospheric pressure metalorganic chemical vapor deposition method. The results show that high-temperature preheating (>500 °C) can modify surface morphology so crystalline quality grown layer be improved. Wi...