A 76-year-old woman who underwent bilateral metal-on-metal total hip arthroplasty fell 3 years after this procedure and subsequently incurred continuous pain in her buttock. Plain radiographs showed no fracture and no loosening of the hip prosthesis. Magnetic resonance imaging revealed an abnormal, large, thick-walled mass with heterogeneous signal intensity at the right buttock. The prerevisio...

A novel SmtB/ArsR family metalloregulator, denoted BxmR, has been identified and characterized from the cyanobacterium Oscillatoria brevis. Genetic and biochemical evidence reveals that BxmR represses the expression of both bxa1, encoding a CPx-ATPase metal transporter, as well as a divergently transcribed operon encoding bxmR and bmtA, a heavy metal sequestering metallothionein. Derepression o...

Trace metals (e.g. Ni, Zn) leached from industrial and agricultural processes are often simultaneously present in contaminated soils and sediments. Their mobility, bioavailability, and ecotoxicity are affected by sorption and cosorption at mineral/solution interfaces. Cosorption of trace metals has been investigated at the macroscopic level, but there is not a clear understanding of the molecul...

The U6 RNA intramolecular stem-loop (ISL) is a conserved component of the spliceosome, and contains an essential metal ion binding site centered between a protonated adenine, A79, and U80. Correlated with protonation of A79, U80 undergoes a base-flipping conformational change accompanied by significant helical movement. We have investigated the dynamics of the U6 ISL by analyzing the power depe...

As silicon-based electronics approach the limit of scaling for increasing the performance and chip density, III-V compound semiconductors have started to attract significant attention owing to their high carrier mobility. However, the mobility benefits of III-V compounds are too easily accepted, ignoring a harmful effect of unavoidable threading dislocations that could fundamentally limit the a...

Single-crystal InAs nanowires (NWs) are synthesized using metal-organic chemical vapor deposition (MOCVD) and fabricated into NW field-effect transistors (NWFETs) on a SiO(2)/n(+)-Si substrate with a global n(+)-Si back-gate and sputtered SiO(x)/Au underlap top-gate. For top-gate NWFETs, we have developed a model that allows accurate estimation of characteristic NW parameters, including carrier...

We investigate charge injection and transport in organic field-effect transistors fabricated by using poly(2,5-bis(3tetradecylthiophene-2-yl)thieno[3,2-b]thiophene) (pBTTT-C14) or poly(3-hexylthiophene) (P3HT) as the active polymer layer. We show that in high mobility devices where the channel resistances are low compared to the contact resistances, the device performance can be dominated by th...

The shift of the threshold voltage Vth in Al2O3/InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) is demonstrated by CF4 plasma treatments. The accompanying channel mobility degradation is monitored to understand the tradeoff design space. The effective negative charge introduced by the F plasma treatments at the oxide interface is found to be as high as %0.73 ' ...

Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current-voltage characteristics and interpreted by using the classical metal oxide-semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm(2) V(-1) s(-1)), the device ch...

Resistivity and Hall effect measurements on nominally undoped Al0.25Ga0.75N/GaN/AlN heterostructures grown on sapphire substrates prepared by metal organic chemical vapor deposition have been carried out as a function of temperature (20–300 K) and magnetic field (0–1.4 T). Variable magnetic field Hall data have been analyzed using the improved quantitative mobility spectrum analysis technique. ...