A fully integrated low-noise amplifier (LNA) with 0.4V supply voltage and ultra-low power consumption at 1.5GHz by folded cascode structure is presented. The proposed LNA is designed in a TSMC 0.18 μm CMOS technology, in which the all transistors are biased in sub-threshold region. Through the use of the proposed circuit for the gain enhancement in this structure and using forward body bias tec...

This work presents a 2.4 GHz, reconfigurable RF Low Noise Amplifier (LNA) using on-chip peak detection and calibration, to mitigate the deleterious effects of process, voltage and temperature (PVT) variations. The LNA can reconfigure its input impedance matching, as well as its gain. On-chip detection of optimal input/output impedance matching is performed using an amplitude peak detector. The ...

Short-channel devices are preferred for realizing millimetre circuits, but these are affected by the shortchannel effects (SCE). Multi-Gate (MG) MOSFET is found to be an alternative to overcome this drawback. In this paper, study and analysis of DC and AC parameters of MG MOSFETs have been attempted and small signal gain (y21) of multi-gate structure is analytically derived. Design of low noise...

This article presents an on-chip state-adjustable 8 GHz~12 GHz low-noise amplifier (LNA). It has two characteristics. First, improved current reuse topology is proposed. By connecting a small capacitor in parallel with the drain of first-stage transistor, bandwidth expanded and in-band flatness improved. Second, innovative adaptive bias circuit designed to cope influence temperature process on ...

An area-efficient 60-GHz wake-up receiver (WuRx) using reconfiguration techniques of multistage low-noise amplifiers (LNAs) is presented. The gain stages of the 60-GHz LNA are reused as the envelope detectors for the wake-up receiver. Therefore, the bulky components such as extra switches between the wake-up receiver and the LNA, additional antennas, and excess input matching network can be rem...

Wireless communication system is an integral part of day today communication. For effective wireless communication, faithful transreceiption of the signal is required. It can be achieved by careful design of the receiver circuit. Hence there is wide scope of improvement in different blocks of the receiver. LNA is the first block of any receiver in communication system. At the receiver side in c...

LNA with Current Reuse and Zero-Pole Cancellation Chunbao Ding, Wanrong Zhang, Dongyue Jin, Hongyun Xie, Pei Shen, Liang Chen, School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China Abstract—A low power cascode SiGe BiCMOS low noise amplifier (LNA) with current reuse and zero-pole cancellation is presented for ultra-wideband (UWB) appli...

The Low Noise Amplifier (LNA) presented in this work offers a gain of 20 dB, a noise figure of 1.6 dB, with an input referred third-order intercept point of –4.5 dBm and a 1 dB compression point of -16 dBm at 5.2 GHz, using 0.35 μm BiCMOS SiGe. It operates on 5 V and requires 10 mA. The output and the input of the amplifier are matched internally to 50 Ω. The amplifier includes an image reject ...

Previously reported wideband CMOS low-noise amplifiers (LNAs) have difficulty in achieving both wideband input impedance matching and low noise performance at low power consumption and low supply voltage. We present a transformer noise-canceling wideband CMOS LNA based on a common-gate topology. The transformer, composed of the input and shunt-peaking inductors, partly cancels the noise origina...

This paper presents a V-band low-noise amplifier with high RF performance and ESD robustness. An inductortriggered silicon-controlled rectifier (SCR) assisted with both a PMOS and an inductor is proposed to enhance the ESD robustness and minimize the impact of the ESD protection block on the millimeter-wave LNA. The initial-on PMOS improves the turn-on speed and the inductor resonates with the ...