The development of perovskite light-emitting diodes (PeLEDs) with both high efficiency and excellent stability remains challenging. Herein, a strong correlation between the lattice strain in films resulting PeLEDs is revealed. Based on high-efficiency PeLEDs, device lifetime optimized by rationally tailoring films. A PeLED peak external quantum 18.2% long 151 h (T70, under current density 20 mA...

The effect of lattice mismatch on the chemical ordering of epitaxial FePt films was studied. The results showed that the lattice constant scd of the FePt films decreased with increasing lattice mismatch « from about 2.23% to 6.33%. Upon further increase of « to about 8.8%, c increased. On the other hand, the variation of the lattice constant sad of the FePt films showed a reversal behavior to t...

Upon nitriding of iron‐based alloys, development of misfitting coherent nitride precipitates in a ferrite matrix induces an overall expansion of the ferrite lattice. This lattice expansion was quan‐ titatively determined by X‐ray diffraction from the change of the lattice parameter of ferrite of homogenously nitrided Fe‐Cr and Fe‐V alloys. Adopting the experimentally verified (by X‐ra...

III–V GaN-based nitride semiconductors have attracted interest because their bandgaps can be tuned by constructing alloys and superlattices, applying lattice strain. Herein, the influence of uniaxial equibiaxial strains on short-period InN/AlN superlattices is examined using first-principles calculations. For strain, change in same manner when are strained a- m-axis directions; however, a diffe...

Grown lattice matched to GaN, InAlN-based heterojunction field effect transistors (HFETs) are promising due to the relatively large band discontinuity at the interface and lack of misfit strain. Despite the recent progress in the growth, there still exists some questions as to the true lattice matching condition of InAlN to GaN due to discrepancies in the value of the lattice parameters of the ...

We investigate the effects of nonuniform uniaxial strain and triaxial on $\ensuremath{\alpha}\text{\ensuremath{-}}{T}_{3}$ lattice. The analytical expressions pseudo-Landau levels (pLLs) are derived based low-energy Hamiltonians, verified by tight-binding calculations. find that pseudo magnetic field leads to oscillating density states, first pLL is sublattice polarized, which distributed only ...

This paper reports a study of multilayer nanolamellar Mo/Nb/TiNi composites designed by the principle martensitic transformation enabled lattice strain matching. The composite was fabricated hot packaged accumulative roll bonding (PARB) and wire drawing. showed an apparent yield strength ~1200 MPa recoverable superelastic ~7%, with mechanical damping ~62 MJ/m3. Both Nb Mo nanolamellae sandwiche...

Cesium acetate was added in a sequential deposition process to fabricate Cs : FAMAPbI 3 , which modulates lattice strain and defect density enhances the efficiency stability of perovskite solar cells.