Abstract Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny. However, realizing stable static in non-transient non-hysteretic regime remains a daunting task. The problem stems from lack understanding how origin NC due emergence domain state can be put use for implementing...

In the present paper, we report crystal structures of four types ([A(1)H][A(2)H]Y, [A(1)H]3[A(2)H]Y2, A(1)H[A(2)H···A(2)]Y, and A(1)H[A(1)H···A(2)]Y) mixed salts containing sulfate anion (Y = SO42−) amino acids A, i.e., sarcosine (Sar), dimethylglycine (DMG), betaine (Bet), β-alanine (β-Ala), l-proline (l-Pro): (β-AlaH)(DMGH)SO4·2H2O (I), (β-AlaH)(BetH)SO4 (II), (β-AlaH)(l-ProH)SO4 (III), (BetH...

Abstract We propose the design and fabrication of a coplanar electrode structure for an organic metal–semiconductor field-effect transistor (OMESFET), with gate self-aligned between source drain electrodes. first used nanoimprint lithography (NIL) to define channel area device on patterned metal, then chemical wet etching create electrodes by removing metal in area. After etching, was deposited...