We have studied the magnetophotoluminescence of doubly stacked layers of self-assembled InP quantum dots in a GaInP matrix. 4.060.1 monolayers of InP were deposited in the lower layer of each sample, whereas in the upper layer 3.9, 3.4, and 3.0 monolayers were used. Low-temperature photoluminescence measurements in zero magnetic field are used to show that, in each case, only one layer of dots ...

We have theoretically estimated the change in refractive index A n produced by injection of free carriers in InP, GaAs, and InGaAsP. Bandfilling (Burstein-Moss effect), band-gap shrinkage, and free-carrier absorption (plasma effect) were included. Carrier concentrations of 1016/cm3 to 10i9/cm3 and photon energies of 0.8 to 2.0 eV were considered. Predictions of A n are in reasonably good agreem...

High Quality III-V Semiconductors/Si Heterostructures for Photonic Integration and Photovoltaic Applications Himanshu Kataria TRITA-ICT/MAP AVH Report 2014:13; ISSN 1653-7610; ISRN KTH/ICT-MAP/AVH-2014:13-SE ISBN 978-91-7595-289-5 Abstract This thesis deals with one of the promising strategies to monolithically integrate III-V semiconductors with silicon via epitaxial lateral overgrowth (ELOG) ...

T. Gao, P. S. Eldridge, T. C. H. Liew, S. I. Tsintzos, G. Stavrinidis, G. Deligeorgis, Z. Hatzopoulos, and P. G. Savvidis Department of Materials Science & Technology, University of Crete, Greece IESL-FORTH, P.O. Box 1527, 71110 Heraklion, Crete, Greece School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore Cavendish Laboratory, University of Cambridge...

Indium phosphide nanocrystals (InP NCs) with diameters ranging from 2 to 5 nm were synthesized with a scalable, flow-through, nonthermal plasma process at a rate ranging from 10 to 40 mg/h. The NC size is controlled through the plasma operating parameters, with the residence time of the gas in the plasma region strongly influencing the NC size. The NC size distribution is narrow with the standa...

We present a concept for the realization of InGaAs/InP micromachined thermoelectric sensors. The advantages of InGaAs lattice matched to InP combine perfectly for this application. The high selectivity of wet chemical etching of InP against InGaAs is ideally suited for surface bulk micromachining. Thermoelectric InGaAs sensors profit from the high thermal resistivity combined with high electric...

Wedemonstrate opto-spintronics using Fe-doped IndiumPhosphide (InP). Themethod is based on optical orientation of InP conduction electron spinswhich are electrically detected in planar InP/ oxide/Ni tunnel spinfilters.We separate the optical excitation from electrical detection, avoiding thus additional interactions of photonswith the ferromagnet. Interface engineering provides a surface iron a...

Expressing proteins of interest as fusion to proteins of bacterial envelope is a powerful technique for biotechnological and medical applications. The synthetic gene (VacII) encoding for T-cell epitopes of selected genes of Mycobacterium tuberculosis namely, ESAT6, MTP40, 38 kDa, and MPT64 was fused with N- terminus of Pseudomonas syringae ice nucleation protein (INP) outer membrane protein. Th...

InGaAsP/InP multiple quantum wells with quantum well intermixing (QWI) have been prepared by Impurity-Free Vacancy Disordering (IFVD). The luminescent characteristics were investigated using photoluminescence (PL) and photoreflectance (PR), from which the band gap blueshift was observed. Si3N4, SiO2 and SOG (spin on glass) were used for the dielectric layer to enhance intermixing from the outdi...