نتایج جستجو برای: inp material

تعداد نتایج: 367987  

2013
R. Gavín I. Ferrer J. A. del Río

1) Molecular and Cellular Neurobiotechnology, Institute of Bioengineering of Catalonia and Department of Cell Biology, University of Barcelona, Baldiri Reixac 15-21, 08028 Barcelona, Spain. 2) Institute of Neuropathology (INP), IDIBELL-Hospital Universitari de Bellvitge, Faculty of Medicine, University of Barcelona, 08907 Hospitalet de LLobregat, Spain. 3) Centro de Investigación Biomédica en R...

2008
V. N. Baier

Around forty years passed from the beginning of operation of the first electron-positron colliding beam facility VEPP-2 in Institute of Nuclear Physics (INP), Novosibirsk. Here I described development of electron-positron colliding beam project in INP, as well as advance of similar projects of the first generation at LAL, Orsay and at LNF, Frascati.

1999
T. Chassé A. Kahn

We present a photoemission study of the electronic properties of organic-inorganic semiconductor heterojunctions formed between the two hole transport materials, N,N8-diphenyl-N, N8-bis~1-naphthyl!-1-18biphenyl-4,49diamine ~a-NPD! and copper-phthalocyanine ~CuPc!, and InP~110!. The highest occupied molecular orbital of a-NPD ~CuPc! is found to be 0.2 eV below ~0.2 eV above! the InP valence band...

2004
Shen Iuan Liu Yu-Hung Liao

ZIRNGIBL. M., DRAGONE, c., and JOYNER. c.H.: ‘Demonstration of a 15 X 15 arrayed waveguide multiplexer on InP’, IEEE Photonics Technol. Lett., 1992, 4, (1 I ) , pp. 1250-1253 VERBEEK, B.H., STARING, A.A.M., JANSEN, E.J., VAN-ROUEN, R., BINSMA, J..I.M., VAN-DONGEN, T., AMERSFOORT, M.R., VAN-DAM, C., and SMIT, M.K.: ‘Large bandwidth polarisation independent and compact eight channel PHASAR demult...

Journal: :Microelectronics Journal 2008
Mi Jung Seok Lee Young Tae Byun Young Min Jhon Sun Ho Kim Deok-Ha Woo Sun-il Mho

Uniform arrays of nano-sized pore produced in porous alumina were transferred into InP substrates by inductively coupled plasma reactive ion etching (ICP-RIE). We observed a significant enhancement in the light output from InP substrate with nanohole arrays on the surface. Photoluminescence intensity of triangular arrays of air cylinders on InP substrate showed an enhancement up to 3 times comp...

Journal: :E3S web of conferences 2023

This research scrutinizes the impact of plane strain on optical characteristics Indium Phosphide (InP) employing first-principles methodology, grounded Density Functional Theory (DFT). The findings suggest that peaks spectral response curves dielectric function, refractive index, extinction coefficient, absorption and reflection coefficient InP, when subjected to tension strain, shift towards l...

2001
M. Hayne V. V. Moshchalkov

We have studied the magnetophotoluminescence of doubly stacked layers of self-assembled InP quantum dots in a GaInP matrix. 4.060.1 monolayers of InP were deposited in the lower layer of each sample, whereas in the upper layer 3.9, 3.4, and 3.0 monolayers were used. Low-temperature photoluminescence measurements in zero magnetic field are used to show that, in each case, only one layer of dots ...

1999
M. Saiful Islam Sagi Mathai Tatsuo Itoh Ming C. Wu Alfred Y. Cho

A novel velocity-matched distributed balanced photodetector with a 50coplanar waveguide output transmission line has been experimentally demonstrated in the InP/InGaAs material system. Distributed absorption and velocity matching are employed to increase the saturation photocurrent. A commonmode rejection ratio greater than 27 dB has been achieved. The radio-frequency (RF) link experiment condu...

2007
S. Seshadri D. M. Cole B. Hancock P. Ringold C. Peay M. Bonati M. G. Brown M. Schubnell G. Rahmer D. Guzman D. Figer G. Tarle R. M. Smith C. Bebek

We compare a more complete characterization of the low temperature performance of a nominal 1.7um cut-off wavelength 1kx1k InGaAs (lattice-matched to an InP substrate) photodiode array against similar, 2kx2k HgCdTe imagers to assess the suitability of InGaAs FPA technology for scientific imaging applications. The data we present indicate that the low temperature performance of existing InGaAs d...

2004
Jun-Xian Fu Seth R. Bank Mark A. Wistey Homan B. Yuen James S. Harris

Single quantum wells In0.53Ga0.47As/Ga0.47In0.53N0.021As0.949Sb0.03 /In0.53Ga0.47As with room-temperature photoluminescence peak wavelength at 2.04 mm were grown on InP substrate by solid-source molecular-beam epitaxy ~MBE!. In situ reflection high-energy electron diffraction was used to monitor the MBE growth. Double-crystal high-resolution x-ray diffraction and secondary ion mass spectrometry...

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