This paper presents an approach towards real-time veriication of Statemate 1 designs. Statemate is a widely used design tool for embedded control units. These embedded control units are usually contained in industrial products and often implement concurrent systems. In our approach designs including all timing information are translated into untimed Kripke Structures which are optimized and the...

Graphics processing units have now been used for scientific calculations for over a decade, going from early proof-of-concepts to industrial use today. The inherent reason is that graphics processors are far more powerful than CPUs when it comes to both floating point operations and memory bandwidth, illustrated by the fact that a growing portion of the top 500 supercomputers in the world now u...

BACKGROUND Characterization at the atomic scale is becoming an achievable task for FM-AFM users equipped, for example, with a qPlus sensor. Nevertheless, calculations are necessary to fully interpret experimental images in some specific cases. In this context, we developed a numerical AFM (n-AFM) able to be used in different modes and under different usage conditions. RESULTS Here, we tackled...

The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with pref...

Introduction: The mainstream SiC grains have presented unsolved puzzles. Whereas their origin in AGB carbon stars seems correct, based on C isotopes and s-process trace elements, the Si isotopes present two dominating puzzles that are quite extreme in the picture [1,2] that chemical evolution of the Galaxy has generated the SiC mainstream correlation line. The first is that most of the donor AG...

Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter-scale areas and consequently, the large scale single crystal can be utilized as a template for growth of other materials. In this work, we present the use of EG as a template to form millimeter-scale amorph...

In this work, using Density Functional, Hartree-Fock and Extended H uckel Theories together with the supercell and cluster model approaches, we present our preliminary results for the simulation of the adsorption of Si and C atoms over the (111) SiC surfaces as well as the torsion of SiC molecules at that surfaces. Our results shown that, before and after the adsorption, the cubic structure ar...

We have explored the properties of SiC-based epitaxial graphene grown in a cold wall UHV chamber. The effects of the SiC surface orientation and silicon loss rate were investigated by comparing the characteristics of each formed graphene. Graphene was grown by thermal decomposition on both the silicon (0001) and carbon (000-1) faces of on-axis semi-insulating 6H-SiC with a "face-down" and "face...

4H-SiC is a wide-bandgap semiconductor with potential applications in power devices. The lack of a liquid phase in SiC hinders conventional crystal growth from the melt; consequently, SiC wafers still have low quality and are nearly 100 times more expensive than Si wafers. To take advantage of the solution growth for improving the quality and reducing the cost of SiC, Ni addition to Si-Ti flux ...

In this paper we describe a methodology and experience of simulation-based verification of microprocessor units based on cycle-accurate contract specifications. Such specifications describe behavior of a unit in the form of preconditions and postconditions of microoperations. We have successfully applied the methodology to several units of the industrial microprocessor. The experience shows tha...