We report the magnetoresistance in novel spin-triplet superconductor UTe2 under pressure close to critical Pc, where superconducting phase terminates, for field along three a, b and c-axes orthorhombic structure. The H // a-axis just below Pc shows a field-reentrant behavior due competition with emergence of magnetic order at low fields. upper Hc2 c-axis quasi-vertical increase H-T diagram indi...

Background and objectives: In Iranian traditional medicine, Anthemis odontostephana Boiss has been used in treating gastric ulcers, diabetes, and inflammatory diseases. In the present study, hepatoprotective activity of A. odontostephana ethanol extract (AOEE) on carbon tetrachloride (CCl4)-induced hepatotoxicity in male mice has been evaluated.  <s...

Abstract The uniaxial strain is an effective way to change the symmetry of a crystal and thus tuning their electronic properties. In present work, we elucidate physical mechanism symmetry-broken-induced energy valleys drift in monolayer molybdenum disulfide. When reduces rotational from C 3 1 in-plane electric field breaks balance electron distribution valleys, valley dipole can survive readily...

V3O7·H2O nanobelts/reduced graphene oxide (rGO) composites (weight ratio: 86%/14%) are synthesized by a microwave approach with high yield (85%) through controlling pH acids. The growth mechanisms of the highly crystalline nanobelts (average diameter: 25 nm; length: ≈20 µm; oriented along [101] direction) have been thoroughly investigated, governing role acid upon morphology and oxidation state...

Spinel-structured NiMn2O4 ceramics, with different valence Ni sources, were originally prepared using Ni2O3 and NiO as raw materials, the effects of sources on their electrical properties first investigated. XRD patterns show that both Ni2O3-based NiO-based ceramics are single cubic spinel structures. SEM/EDS images indicate exhibited high density at experiment-determined sintering temperatures...

In this letter, we investigate the on-resistance ( R ON ) instability in p-GaN power HEMTs induced by a positive or negative gate bias xmlns:xlink="http://www.w3.org/1999/xlink">V xmlns:xlink="http://www.w3.org/1999/xlink">GB ), fo...