a binuclear macrocyclic ligand containing dissimilar n(amine)2o2 and n(imine)2o2 coordination sites sharing two phenolic oxygen atoms, was prepared by cyclic condensation of dialdehyde precursor l1h2 with 1,3-diaminopropane. the ligand includes two propionitrile pendant arms on the amine nitrogen atoms. the homobimetallic complex [znl2zn(oac)]pf6 was synthesized by one step procedure. heterobim...

An experimental method of studying shifts between concentration-versus-depth profiles of vacancyand interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy–oxygen center, and the interstitial profile, represented by t...

The damage created in SiO2 layers by low-energy Ar ions ~130 keV! and the reconstruction of the structure after various annealing steps have been characterized as a function of the implantation dose. Quantitative determinations of the damage produced have been performed from infrared spectroscopy. We show that two dose thresholds for damage are encountered: At 10 cm damage saturates and for dos...

We have measured the effects of dilute magnetic-atom doping on the superconducting transition temperature of tungsten thin films. Our ‘‘Tc tuning’’ technique is accurate, precise, and simple. Experiments were performed using dc-magnetron-sputtered tungsten films with undoped values of Tc in the range of 70–150 mK. The magnetic-atom doping was achieved using ion implantation. Specific Tc suppres...

The enhanced diffusion of donor atoms, via a vacancy (V)-mechanism, severely affects the realization of ultrahigh doped regions in miniaturized germanium (Ge) based devices. In this work, we report a study about the effect of fluorine (F) on the diffusion of arsenic (As) in Ge and give insights on the physical mechanisms involved. With these aims we employed experiments in Ge co-implanted with ...

In order to investigate the nature of defects produced by ion irradiation through a heterostructure, a silicon-on-insulator substrate with a buried SiO2 layer at a depth of ;1.5 mm was irradiated. The implantation was done using 2 MeV Si ions in the dose range of 0.2– 1310 cm. The subsequent defect analysis was performed using the Au labeling technique. Besides the presence of an expected exces...

[1] A three-dimensional Monte Carlo model of Mercury’s neutral sodium exosphere was used to describe correlation between the observed variations in the exospheric density and the variations in the surface concentration of sodium along Mercury’s motion around the Sun [Leblanc and Johnson, 2003]. Four processes of ejection were taken into account: thermal and photon stimulated desorptions, solar ...

Background: Implantation is a crucial period determining the success of a full pregnancy. Endocrine disruptors such as phytoestrogens (PEs) were thought to adversely influence embryonic implantations. However, the mechanism by which they upset implantation was not fully elucidated. Aims: The effect of administering soy isoflavones on the implantation of Wistar ...