نتایج جستجو برای: heterostructure

تعداد نتایج: 4263  

2017
Giacomo Argentero Andreas Mittelberger Mohammad Reza Ahmadpour Monazam Yang Cao Timothy J Pennycook Clemens Mangler Christian Kramberger Jani Kotakoski A K Geim Jannik C Meyer

In this work we demonstrate that a free-standing van der Waals heterostructure, usually regarded as a flat object, can exhibit an intrinsic buckled atomic structure resulting from the interaction between two layers with a small lattice mismatch. We studied a freely suspended membrane of well-aligned graphene on a hexagonal boron nitride (hBN) monolayer by transmission electron microscopy (TEM) ...

2015
Jiayong Zhang Bao Zhao Yugui Yao Zhongqin Yang

Quantum anomalous Hall (QAH) effect, with potential applications in low-power-consumption electronics, is predicted in the heterostructure of graphene on the (001) surface of a real antiferromagnetic insulator RbMnCl3, based on density-functional theory and Wannier function methods. Due to the interactions from the substrate, a much large exchange field (about 280 meV) and an enhanced Rashba sp...

Journal: :Physical review letters 2013
Junhua Zhang E Rossi

We study the "hybrid" heterostructure formed by one sheet of single-layer graphene (SLG) and one sheet of bilayer graphene (BLG) separated by a thin film of dielectric material. In general, it is expected that interlayer interactions can drive the system to a spontaneously broken-symmetry state characterized by interlayer phase coherence. The peculiarity of the SLG-BLG heterostructure is that t...

2016
Tao Zhang Bei Jiang Zhen Xu Rafael G. Mendes Yao Xiao Linfeng Chen Liwen Fang Thomas Gemming Shengli Chen Mark H. Rümmeli Lei Fu

Twinned growth behaviour in the rapidly emerging area of two-dimensional nanomaterials still remains unexplored although it could be exploited to fabricate heterostructure and superlattice materials. Here we demonstrate how one can utilize the twinned growth relationship between two two-dimensional materials to construct vertically stacked heterostructures. As a demonstration, we achieve 100% o...

2014
Jin-Jian Zhou Wanxiang Feng Ying Zhang Shengyuan A. Yang Yugui Yao

The search for strongly inversion asymmetric topological insulators is an active research field because these materials possess distinct properties compared with the inversion symmetric ones. In particular, it is desirable to realize a large Rashba spin-splitting (RSS) in such materials, which combined with the topological surface states (TSS) could lead to useful spintronics applications. In t...

Journal: :Science 2015
Y H Wang J R Kirtley F Katmis P Jarillo-Herrero J S Moodera K A Moler

A magnetic domain boundary on the surface of a three-dimensional topological insulator is predicted to host a chiral edge state, but direct demonstration is challenging. We used a scanning superconducting quantum interference device to show that current in a magnetized topological insulator heterostructure (EuS/Bi2Se3) flows at the edge when the Fermi level is gate-tuned to the surface band gap...

2003
Yong Guo Xue-Zhen Dai

We demonstrate spin-dependent tunneling features of electronic transport in diluted magnetic semiconductor/semiconductor hybrid systems. It is shown that the geometrical asymmetry of the multilayer heterostructure results in the asymmetry of the spin polarization on the external electric field. The degree of the asymmetry can be changed by adjusting the structural configuration and the magnitud...

2003
J. F. Annett H. H. Wills

We discuss the properties of a ferromagnet superconductor heterostructure on the basis of a Hubbard model featuring exchange splitting in the ferromagnet and electron electron attraction in the superconductor. We have solved the spin polarized Hartree Fock Gorkov equations together with the Maxwell’s equation (Ampere’s law) fully self-consistently. We have found that a Proximity Effect Fulde Fe...

2016
John R Schaibley Pasqual Rivera Hongyi Yu Kyle L Seyler Jiaqiang Yan David G Mandrus Takashi Taniguchi Kenji Watanabe Wang Yao Xiaodong Xu

Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. H...

2004
Yuh-Renn Wu Jasprit Singh

In this letter, we examine the potential of a functional device that can have good transistor and stress sensor properties. The device examined is based on the use of a thin oxide with high piezoelectric coefficients under the gate region. Channel charge and current are controlled by gate voltage or by stress. We examine the performance of two classes of heterostructures that are important semi...

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