The multifrontal LU method is implemented to solve drift-diffusion models with large sparse matrices arising in the simulation and optimization of semiconductor devices. The performance of this method is compared with the LU algorithm without multifrontal scheme on different computers in the case of a realistic double heterojunction transistor. Résumé On emploie un méthode LU multifrontale pour...

Asimple analytic method for transistor oscillator design has been developed. This technique defines explicit expressions for optimum values of feedback elements and load through bipolar transistor z-parameters. Such an approach is useful for practical optimization of a series feedback microwave bipolar oscillator. Microwave oscillator design in general represents a complex problem. Depending on...

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...

Monolithic microwave integrated circuits hold a dominant position in telecom applications, especially mobile devices with capabilities for wireless connectivity, due to high and repeatable performance, compact form factor, low cost. With flexible electronic technologies forming the foundation rapidly growing wearable implantable device segment, need electronics levels of performance that match ...

The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostruc...

This application report discusses how a super matched bipolar transistor pair sets new standards for drift and noise.

A voltage-controlled negative-differential-resistance device using a merged integrated circuit of two n-channel enhancement-mode MOSFETs and a vertical NPN bipolar transistor, called vertical Lambda-bipolar-transistor (VLBT), is presented for memory application. The new VLBT structure has been developed and its characteristics are derived by a simple circuit model and device physics. A novel si...