abstract: this paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (gnrfet). the results illustrate that the gnrfet under high temperature (ht-gnrfet) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay ...

Adding a mechanical degree of freedom to the electrical and optical properties of atomically thin materials can provide an excellent platform to investigate various optoelectrical physics and devices with mechanical motion interaction. The large scale fabrication of such atomically thin materials with suspended structures remains a challenge. Here we demonstrate the wafer-scale bottom-up synthe...

Using molecular dynamics simulation, we have shown that multilayer graphene nanoribbons located on the flat surface of h-BN crystal (on substrate) delaminate due to thermal activation into a parquet single-layer substrate. The delamination requires overcoming energy barrier associated with initial shift its upper layer. After barrier, proceeds spontaneously release energy. value this has been e...

Understanding the roles of disorder and metal/graphene interface on the electronic and transport properties of graphene-based systems is crucial for a consistent analysis of the data deriving from experimental measurements. The present work is devoted to the detailed study of graphene nanoribbon systems by means of self-consistent quantum transport calculations. The computational formalism is b...

Atomically precise graphene nanoribbons (GNRs) are a promising emerging class of designer quantum materials with electronic properties that tunable by chemical design. However, many challenges remain in the device integration these materials, especially regarding contacting strategies. We report on uniaxially aligned and non-aligned 9-atom wide armchair (9-AGNRs) field-effect transistor geometr...

Semiconductor nanowires (NWs) or nanobelts (NBs) have attracted more and more attention due to their potential application in novel optoelectronic devices. In this review, we present our recent work on novel NB photodetectors, where a three-terminal metal-semiconductor field-effect transistor (MESFET) device structure was exploited. In contrast to the common two-terminal NB (NW) photodetectors,...