The bulk MOSFET scaling has recently encountered significant limitations, mainly related to the gate oxide (SiO2) leakage currents (Gusev et al., 2006; Taur et al., 1997), the large increase of parasitic short channel effects and the dramatic mobility reduction (Fischetti & Laux, 2001) due to highly doped Silicon substrates precisely used to reduce these short channel effects. Technological sol...

In this paper, we demonstrate high mobility solution-processed metal-oxide thin-film transistors (TFTs) by using a high-frequency-stable ionic-type hybrid gate dielectric (HGD). The HGD gate dielectric, a blend of sol-gel aluminum oxide (AlOx) and poly(4-vinylphenol) (PVP), exhibited high dielectric constant (ε~8.15) and high-frequency-stable characteristics (1 MHz). Using the ionic-type HGD as...

In this paper electrical characteristics of various kinds of multiple-gate silicon nanowire transistors (SNWT) with the channel length equal to 7 nm are compared. A fully ballistic quantum mechanical transport approach based on NEGF was employed to analyses electrical characteristics of rectangular and cylindrical silicon nanowire transistors as well as a Double gate MOS FET. A double gate, tri...

The High-K Metal Gate (HKMG) technology has become the keystone to reduce gate leakage and enable the continuous scaling of transistors towards 32nm node and beyond. However, the reduction of gate leakage in 32nm HKMG PD (Partially Depleted)-SOI (Silicon-On-Insulator) CMOS (Complementary Metal–Oxide–Semiconductor) inevitably changes the modeling methods for gate current, floating body effect, a...

One point of congestion in the air transportation system is the set of gates at a terminal. When an inbound flight is unable to pull into its assigned gate, the flight, its connecting passengers, and its flight crews experience delays and missed connections. Previous research has focussed on optimizing gate assignments, both scheduled and disrupted, and optimizing surface flow. This paper analy...

Polycrystalline silicon (poly-Si) has been used as the gate material for MOSFETs for several decades. This is because it is highly compatible with CMOS processing, and its work function can be selectively modified by ion implantation of the appropriate dopants. The gate-depletion effect, which increases the equivalent SiO2 thickness (EOT) of the gate dielectric by several Angstroms and thereby ...

Dynamic Power by internal capacitance * Short-circuit Current Dissipation . ~ ~ ~ ~ ~ i ~ i ~ ~ i~~ 1 I Delay Abstract---It is known that input reordering of a gate affects the power dissipated by the internal capacitance of the reordered gate, which has been utilized for power reduction so far. We show that the reordering also has a significant effect on the power dissipation of the gate which...

Low frequency noise characteristics of gate and drain currents are investigated for prestressed and poststressed AlGaN/GaN high electron mobility transistors. High reverse bias voltage stresses on the gate stack changes both drain and gate current noise. A temporary increase in drain current noise was observed during stress which recovered to prestress level a few weeks later. This is explained...

This paper proposes a novel reversible logic gate, NFT. It is a parity preserving reversible logic gate, that is, the parity of the outputs matches that of the inputs. We demonstrate that the NFT gate can implement all Boolean functions. It renders a wide class of circuit faults readily detectable at the circuit’s outputs. The proposed parity preserving reversible gate, allows any fault that af...

In this paper, gate leakage current has been mitigated by the use of novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure for the first time. A compact analytical model has been developed to study the gate leakage behaviour of proposed MOSFET structure. The result obtained has found good agreement with the Sentaurus Simulation. Fringing gate electric field...