Three-dimensional (3D), multi-transistor-layer, integrated circuits represent an important technological pursuit promising advantages in integration density, operation speed, and power consumption compared with 2D circuits. We report fully functional, 3D integrated complementary metal-oxide-semiconductor (CMOS) circuits based on separate interconnected layers of high-mobility n-type indium arse...

A multilayer of GeSi nanowires separated with Si spacers was readily self-assembled on miscut Si (001) substrates with 8 degrees off toward (110). The nanowires oriented along the miscut direction were very small and compactly arranged on the vicinal surface. Systematic photoluminescence (PL) spectroscopy studies were carried out on the GeSi nanowires. With increasing excitation power, a sublin...

Families of very high-index planes, such as those which bifurcate spontaneously to form a hill-and-valley structure composed of opposing facets, provide natural templates for the directed growth of position-controlled self-organized nanostructures with shapes determined by the facet width ratio R. For example, deposition of a few ML of Ge on Si(173 100 373), corresponding to R(113/517) = 1.7, r...

M. K. Y. Chan,1,2 J. Reed,3 D. Donadio,4 T. Mueller,2 Y. S. Meng,2,5 G. Galli,4 and G. Ceder2 1Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA 2Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA 3Lawrence Livermore National Laboratory, Livermore, CA 94551, USA 4Department of Chemistry, Universit...

  In this work,copper/palladium (Cu/Pd) multilayer nanowires were successfully prepared by electrodeposition method using polycarbonate template. The fabrication of Pd/Cu multilayer nanowires was controlled by analyzing the current–time transient during electrodeposition using potentiostat. The morphological properties of the nanowires were studied by scanning electron microscopy (SEM) and resu...

In a theoretical design study, we propose buried waveguides made of germanium or alloys of germanium and other group-IV elements as a CMOS-compatible platform for robust, high-gain stimulated Brillouin scattering (SBS) applications in the mid-infrared regime. To this end, we present numerical calculations for backward-SBS at 4 μm in germanium waveguides that are buried in silicon nitride. Due t...