نتایج جستجو برای: ge interaction

تعداد نتایج: 584317  

Journal: :Critical Care 2007
Nam Q Nguyen Mei P Ng Marianne Chapman Robert J Fraser Richard H Holloway

INTRODUCTION Disturbed gastric emptying (GE) occurs commonly in critically ill patients. Admission diagnoses are believed to influence the incidence of delayed GE and subsequent feed intolerance. Although patients with burns and head injury are considered to be at greater risk, the true incidence has not been determined by examination of patient groups of sufficient number. This study aimed to ...

2005
Guang-Hong Lu Martin Cuma

Using the first-principles total energy method, we calculate surface energies, surface stresses, and their strain dependence of the Ge-covered Si 001 and 105 surfaces. The surface energy of the Si 105 surface is shown to be higher than that of Si 001 , but it can be reduced by the Ge deposition, and becomes almost degenerate with that of the Ge/Si 001 surface for three-monolayer Ge coverage the...

2014
Kirill V. Zaitsev Sergey S. Karlov Galina S. Zaitseva Ali Alizade Yuri L. Slovokhotov

The mol-ecule of the title compound, C40H42Ge4, lies with its central Ge-Ge bond on an inversion centre giving rise to a zigzag backbone of four tetra-hedrally coordinated Ge atoms. The symmetrically independent Ge-Ge bonds are slightly shorter than in other organo-tetra-germanes whereas the Ge-CPh (Ph = phen-yl) and Ge-CMe (Me = meth-yl) distances have their usual values. In the crystal, (010)...

Journal: :Journal of animal science 2016
J B Liu Z Q Liu L Chen H F Zhang

The present study was conducted to investigate the effects of feed intake (FI) and dietary nutrient concentration on the determination of apparent ileal digestibility (AID) and apparent total tract digestibility (ATTD) of nutrients and GE for growing pigs. A total of 48 growing pigs (40.7 ± 1.3 kg initial BW) were surgically fitted with simple T-cannulas at the distal ileum and assigned to 6 tr...

Journal: :Physical review 2021

Single layer Pb on top of (111) surfaces group IV semiconductors hosts charge density wave and superconductivity depending the coverage substrate. These systems are normally considered to be experimental realizations single band Hubbard models their properties mostly investigated using lattice with frozen structural degrees freedom, although reliability this approximation is unclear. Here, we c...

Journal: :Nucleation and Atmospheric Aerosols 2022

Wheat is one of the most produced cereals in world and used manufacture various products that are consumed daily. As a result, there need to produce quality wheat regions world, meet demand reduce transportation costs. It versatile crop, all over with wide number cultivars adapted local conditions. This work had objectives comparing values genotype-environment interaction (GE) obtained using ad...

Journal: :Nanotechnology 2012
Monica Bollani Daniel Chrastina Valeria Montuori Daniela Terziotti Emiliano Bonera Giovanni M Vanacore Alberto Tagliaferri Roman Sordan Corrado Spinella Giuseppe Nicotra

The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate p...

Journal: :The Journal of infectious diseases 1998
J K Olson R A Santos C Grose

Varicella-zoster virus (VZV) encodes a functional cell membrane Fc receptor called glycoprotein gE. VZV gE resembles other mammalian cell membrane receptors, such as the mammalian Fc receptor. In further analyses by transient transfection, the cellular trafficking of VZV gE was compared to other cell surface receptors. VZV gE was shown to undergo endocytosis from the cell membrane when visualiz...

پایان نامه :دانشگاه آزاد اسلامی - دانشگاه آزاد اسلامی واحد تهران مرکزی - دانشکده فنی 1389

در این تحقیق، مشخصه های جریان، توان و بازده کوانتومی در آشکارساز تک حاملی utc-pd و پهنای باند در آشکارساز تک حاملی p-ge/i-si/n-si بررسی می شود و با استفاده از نظریه آشکارساز حلقوی، برای نخستین بار آشکارساز حلقوی تک حامل روندهp-ge/i-si/n-si طراحی و ارائه می شود. الگوی ارائه شده برای ساختار p-ge/i-si/n-si mr-utc-pd متشکل از الگوهای ساختار آشکارساز تک حامل رونده p-ge/i-si/n-si و ساختار موجبر حلقوی...

Journal: :Journal of nanoscience and nanotechnology 2008
P Meduri G U Sumanasekera Z Chen M K Sunkara

Here, we report the synthesis of Si(x)Ge(1-x) nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized Si(x)Ge(1-x) nanowires. Analysis of peak intensities observed for Ge (near 300 cm(-1)) and the Si-Ge alloy (near 400 cm(-1)) allowed accurate estimatio...

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