Polycrystalline silicon (poly-Si) has been used as the gate material for MOSFETs for several decades. This is because it is highly compatible with CMOS processing, and its work function can be selectively modified by ion implantation of the appropriate dopants. The gate-depletion effect, which increases the equivalent SiO2 thickness (EOT) of the gate dielectric by several Angstroms and thereby ...

In this paper, gate leakage current has been mitigated by the use of novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure for the first time. A compact analytical model has been developed to study the gate leakage behaviour of proposed MOSFET structure. The result obtained has found good agreement with the Sentaurus Simulation. Fringing gate electric field...

2.Introduction The replacement in MOS devices of the so far almost perfect SiO2 by another material with a higher dielectric constant (high-k) has been proposed as a solution to the increase in gate current associated to device dimensions shrinking [1]. However, before the effective substitution of SiO2 in commercial IC’s, the electrical properties and reliability of these materials must be wel...

In this work a novel, high quality, high-density, 100% yield, deposited at room temperature ultra thin 5nm Si3N4 Metal Insulator Metal (MIM) capacitor process for Monolithic Millimetre-wave Integrated Circuits (MMMICs) applications is demonstrated using inductively coupled plasma enhanced chemical vapor deposition technique (ICP-CVD). Capacitance of 6.7fF/μm and a breakdown electric field of mo...

To manage the increasing static leakage in low power applications and reduced Ion/Ioff due to aggressive scaling of MOS transistors, Tunnel FET (TFET) devices are considered as the most promising candidates because of their excellent immunity against such important short channel effects. Solutions for leakage reduction as well as improving on current of the device are sought at the device desig...

Influence of dielectric materials as gate oxide on various short channel device parameters using a 2-D device simulator has been studied in this paper. It is found that the use of high-k dielectrics directly on the silicon wafer would degrade the performance. This degradation is mainly due to the fringing field effect developed from gate to source/drain. This fringing field will further generat...

To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant high-k metal oxides, and HfO2 in particular, are being implemented as a replacement for SiO2. To speed the rate of processing, it is desirable to etch the gate stack e.g., metal gate, antireflection layers, and dielectric in a single process while hav...

Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could...

The thickness decrease of the SiO2 used as the gate oxide of MOS devices has become one of the main showstoppers of the microelectronic scaling down process, due to a dramatic increase of leakage currents and a decrease in lifetime[1]. The use of an alternative material with a higher dielectric constant (high-K) has been proposed to replace SiO2 as the gate dielectric, because High-K materials ...

INTRODUCTION The gate dielectric has been the subject of constant improvement and innovation since the invention of the MOSFET transistor. The gate oxide is the major transistor component to control the transistor channel underneath with respect to leakage currents as well as saturation drive currents. The demand for higher drive currents and better performance has also pushed the gate oxide th...