Curcumin derivatives labelled with fluorine-18 or technetium-99m have recently shown their potential as diagnostic tools for Alzheimer's disease. Nevertheless, no study by exploiting the labelling with gallium-68 has been performed so far, in spite of its suitable properties (positron emitter, generator produced radionuclide). Herein, an evaluation of the affinity for synthetic β-amyloid fibril...

The synthesis and reactivity of nickel complexes with the [2-(dimethylamino)ethyl]cyclopentadienyl ligand (CpN) are described. The reaction of NiBr2 with CpNLi leads to the new paramagnetic nickelocene derivative (Cp)2Ni (1), which has been characterized by 1H and 13C NMR, elemental analysis, and mass spectroscopy. Synproportionation of this complex with Ni(CO)4 affords quantitatively the dimer...

Nanowire-nanocluster hybrid chemical sensors were realized by functionalizing gallium nitride (GaN) nanowires (NWs) with titanium dioxide (TiO(2)) nanoclusters for selectively sensing benzene and other related aromatic compounds. Hybrid sensor devices were developed by fabricating two-terminal devices using individual GaN NWs followed by the deposition of TiO(2) nanoclusters using RF magnetron ...

Liquid Metal Liesegang Rings In article number 2209392, Qian Wang, Jing Liu, and co-workers investigate the rings phenomenon induced by gallium-based liquid metal (LM) on gold film systems. The mechanisms are attributed to reaction-diffusion spreading-limiting processes of LM film, over which chemical reactions occur simultaneously with spatially recurrent crystallization intermetallic compound...

In this paper, tetragonal chalcopyrite (CIGS) Cu(InxGa1-x)Se2 with x=0, 0.5, 0.8, 1 are synthesized by heating-up method. These nanoparticle structures differ in morphology and absorption properties due to the synthesis temperatures of 250, 255, 260, 265, 270 and 280 ºC, and gallium molar ratio over the total gallium and indium contents. These features are studied using scanning electron m...

Ga self-diffusion in gallium phosphide ~GaP! is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy ~SIMS! is used to monitor intermixing of Ga and Ga between isotopically pure GaP epilayers which are grown by molecular beam epitaxy ~MBE! on GaP substrates. The Ga self-diffusion coefficient in undoped GaP is determined to be D52.0 cm s exp(24.5 eV/...