Complementary MOSFET (CMOS) using high mobility materials using III-V and Ge channels are expected to be one of promising devices for high performance and low power advanced LSIs in the future under sub-10 nm regime, because of the enhanced carrier conduction properties. The advantages of MOSFETs using those materials can basically originate in the low effective mass, which leads to high inject...

The work described in this paper is performed to estimate the influence of statistical process variations and transistor mismatch that occurs in fabrication and affect floating-gate digital circuits. These effects will affect and reduce “yield” (percentage of fully functional circuits). Monte Carlo simulations have been performed in a 90 nm to estimate the yield for manufactured floating-gate c...

The continuous demand for improved CMOS transistors necessitate smailer device dimensions. The reduction in chip size into the deep sub-micron dimensions opens up new scientific and engineering challenges. One of the most critical material in developing deep sub-micron MOS transistors is high quality ultrathin (a few nm) gate dielectric film. As the gate dielectric thickness is reduced to below...

The two-dimensional layer of molybdenum disulfide (MoS(2)) has recently attracted much interest due to its direct-gap property and potential applications in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS(2) atomic thin layers is still rare. Here we report that the high-temperature annealing of a thermally decomposed ammonium thio...

The most relevant phenomenon of this past decade in the field of semiconductor memories has been the explosive growth of the Flash memory market, driven by cellular phones and other types of electronic portable equipment (palm top, mobile PC, mp3 audio player, digital camera, and so on). Moreover, in the coming years, portable systems will demand even more nonvolatile memories, either with high...

Abstarct The work presents the newly deploying technology in semiconductor industry called silicon on insulator (SOI). Its two technology partially and fully depleted SOI and describe how these are different from conventional bulk MOS technology, advantages over bulk technology and floating body effect of PD/FD SOI technology, factors effecting floating body such as kink effects in PD SOI, para...

In this paper, the magnetic field effect on carrier transport phenomenon in double gate metal-oxide-semiconductor field-effect transistor (MOSFET) has been investigated. This is done by exploring Lorentz force and behavior of a semiconductor subjected to constant field. The modulates electrons position density as well potential distribution case silicon tunnel tunneling field-effects (FETs). mo...

Oxide tunneling current in MOS transistors is fast becoming a non-negligible component of power consumption as gate oxides get thinner, and could become in the future the dominant leakage mechanism in sub-100nm CMOS circuits. In this paper, we present an analysis of static CMOS circuits from a gate-leakage point of view. We first consider the dependence of the gate current on various conditions...

In the depletion approximation for n-channel MOS structures we have neglected the electrons beneath the gate electrode when the gate voltage is less than the threshold voltage, VT. We said that it is only when the gate voltage is above threshold that they are significant, and that they are then the dominant negative charge under the gate. Furthermore, we say that above threshold all of the gate...

We present a programmable continuous-time floating-gate Fourier processor that decomposes the incoming signal into frequency bands by analog bandpass filters, multiplies each channel by a nonvolitile weight, and then recombines the frequency channels. A digital signal processor would take a similar approach of computing a fast Fourier transform (FFT), multiplying the frequency components by a w...