Field effect transistors (FET) have been widely used as transducers in electrochemical sensors for over 40 years. In this report, a FET transducer is compared with the recently proposed bipolar junction transistor (BJT) transducer. Measurements are performed on two chloride electrochemical sensors that are identical in all details except for the transducer device type. Comparative measurements ...

The advantages of organic field-effect transistors (OFETs), such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organ...

In this paper, we present a 0.7 V low-noise amplifier(LNA) using monolithic transformer feedback to neutralize the gate-drain overlap capacitance of a field-effect transistor(FET). It is a single-ended amplifier implemented in 0.18-μm CMOS technology designing for 5-GHz wireless local-area networks (LANs). This LNA achieves a simulated power gain of 10.84 dB, noise figure(NF) of 2.4 dB, and inp...

The purpose of this study was to detect saccharide-protein interaction capitalizing on the gel-modified field effect transistor [FET]. A lectin-sensitive polymer gel that undergoes volume changes in response to the formation of molecular complex between 'pendant' carbohydrate and a 'target' lectin concanavalin A [Con A] was synthesized. It was revealed that direction and magnitude of the gel re...

The building blocks of silicon-based microelectronics are field effect transistors (FET) whose basic function is to switch electrical current between two electrodes on and off with a third electrode (gate). Building a single molecule FET is naturally considered to be a critical step towards the ultimate goal of molecular electronics. FET-like behavior has been demonstrated in carbon nanotubes[1...

Heterostructure engineering capability, especially in the radial direction, is a unique property of bottom-up nanowires (NWs) that makes them a serious candidate for high-performance field-effect transistors (FETs). In this Letter, we present a comprehensive study on size dependent carrier transport behaviors in vapor-liquid-solid grown Ge/Si core/shell NWFETs. Transconductance, subthreshold sw...

A multi-nanosheet field-effect transistor (mNS-FET) device was developed to maximize gate controllability while making the channel in form of a sheet. The mNS-FET has superior for stacked channels; consequently, it can significantly reduce short-channel effect (SCE); however, punch-through inevitably occurs bottom portion that is not surrounded by gates, resulting large leakage current. Moreove...

This paper presents a new ?-Ga2O3 Junctionless double gate Metal-Oxide-Field-Semiconductor-Effect-Transistor (?DG-JL-FET) with an embedded P+ packet at the oxide layer (PO-?DG-JL-FET) for high-frequency applications. Our goal is to achieve efficient volume depletion region by placing of silicon. We show that proposed structure has subthreshold swing ? 64 mV/decade. It suppressed band-to-band tu...

The electrical characteristics of germanium p-metal– oxide–semiconductor (p-MOS) capacitor and p-MOS field-effect transistor (FET) with a stack gate dielectric of HfO2/TaOxNy are investigated. Experimental results show that MOS devices exhibit much lower gate leakage current than MOS devices with only HfO2 as gate dielectric, good interface properties, good transistor characteristics, and about...

High speed and low power dissipation devices are expected from future generation technology of Nano-electronic devices. Tunnel field effect transistor (TFET) is unique to the prominent in applications. To minimize leakage currents, tunnel switching TFETs superior conventional MOS FETs. The gate coverage area different fin shape hybrid field-effect transistors more impacted on electric character...