نتایج جستجو برای: field effect diode fed

تعداد نتایج: 2406486  

2005
Chih-Wei Chu Chieh-Wei Chen Sheng-Han Li Yang Yang

A high-performance organic active matrix pixel was fabricated by using a metal oxide sV2O5d coupling layer that effectively integrates an organic light-emitting diode sOLEDd on top of an organic field-effect transistor sOFETd. The field-effect mobility of the OFET approached 0.5 cm2 V−1 s−1 and the ON/OFF current ratio was .103. The brightness of the OLED was on the order of 2000 cd/m2, with an...

2005
O. Veledar S. Danaher J. I. H. Allen P. O. Byrne L. F. Thompson

The electrical characteristics of Light Emitting Diodes (LEDs) are considered. The standard circuits used for creating LED pulses in the nanosecond region are reviewed. Additional design work on the electronic circuits has been carried out and the results from the developed circuits are shown.

Journal: :Physical review letters 2003
A S Dhoot N C Greenham

The triplet to singlet exciton formation ratio in a MEH-PPV light-emitting diode is measured by comparing the triplet-induced absorptions with optical and electric excitations at the same singlet exciton density. The ratio is a strong universal decreasing function of the averaged electric field. Using 4 ns for singlet to triplet intersystem crossing time, the ratio is significantly larger than ...

2011
Mattias Kuldkepp

Diode lasers have many benefits, but it is very hard to make diode lasers that have both high spectral purity and high intensity. In this masters thesis a diode laser amplifier with a gain of G=4 is constructed. The amplifier is a double-pass semiconductor laser amplifier and the active region is 100 ~m broad. The amplifier is operated at 793 nm using an external cavity diode laser as master la...

2016
Wen-Chung Chang Sheng-Chien Su Chia-Ching Wu

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction...

2005
WOJCIECH GAWLIK JERZY ZACHOROWSKI

Different methods of stabilization of diode lasers are reviewed with the emphasis on stabilization to atomic transitions. The stabilization methods to Doppler-broadened and Doppler-free resonances are presented. A novel method of stabilization using the saturated dichroism of atomic vapours is described. An example of stability transfer from the diode laser onto the reference Fabry–Perot cavity...

Journal: :The British journal of ophthalmology 2004
M L Laursen F Moeller B Sander A K Sjoelie

BACKGROUND/AIM Enlargement of laser scars after retinal argon laser photocoagulation can give rise to deterioration in visual acuity. Subthreshold micropulse diode laser may decrease this risk. The aim of this study was to compare the effectiveness of subthreshold micropulse diode laser (810 nm) and conventional argon laser (514 nm) photocoagulation for the treatment of clinically significant m...

1998
P. I. Melnikov J. B. Greenly D. A. Hammer

Active Stark Atomic Spectroscopy (ASAS) method can be used to determine the electric field in the diode of an ion or electron accelerator as a function of position and time, including the positions of anode and cathode plasma emission surfaces (in order to obtain the effective accelerating gap). As possible probe beams, we suggest the use of lithium and sodium atoms. The diagnostic provides a m...

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