Polarization-driven resistive switching in ferroelectric tunnel junctions (FTJs)--structures composed of two electrodes separated by an ultrathin ferroelectric barrier--offers new physics and materials functionalities, as well as exciting opportunities for the next generation of non-volatile memories and logic devices. Performance of FTJs is highly sensitive to the electrical boundary condition...

Effect of Asymmetrical Interface Charges on the Hysteresis and Domain Configurations of Ferroelectric Thin Films I. B. Misirlioglu a , M. B. Okatan b & S. P. Alpay b a Faculty of Engineering and Natural Sciences, Sabancı University, Tuzla-Orhanlı, 34956, Istanbul, Turkey b Department of Chemical, Materials, and Biomolecular Engineering, Materials Science and Engineering Program, and Institute o...

imaging of ferroelectric domains in BiFeO3 nanostructures Ramesh Nath, Seungbum Hong, Jeffrey A. Klug, Alexandra Imre, Michael J. Bedzyk, Ram S. Katiyar, and Orlando Auciello Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA Institute of Functional Nanomaterials, University of Puerto Rico, San Juan Puerto Rico 00931, USA Department of Physics and Astronomy, No...

Functional materials showing both negative thermal expansion (NTE) and physical performance, such as ferroelectricity and magnetism, have been extensively explored in the past decade. However, among ferroelectrics a remarkable NTE was only found in perovskite-type PbTiO3-based compounds. In this work, a large NTE of -4.7 × 10(-5) K(-1) is obtained in the non-perovskite lead-free ferroelectric S...

Ferroelectric materials are known to be lossy at microwaves. A local microetching technique based on laser ablation is implemented here to reduce the insertion loss of highly tunable devices fabricated on KTa1−xNbxO3 (KTN) ferroelectric thin films. The relevance of this approach is studied in X-band by comparing numerically and experimentally the performance of a frequency-tunable coplanar wave...

Charged domain walls in ferroelectric materials are of high interest due to their potential use in nanoelectronic devices. While previous approaches have utilized complex scanning probe techniques or frustrative poling here we show the creation of charged domain walls in ferroelectric thin films during simple polarization switching using either a conductive probe tip or patterned top electrodes...