Several methods have been employed to synthesize SiC nanowires. The methods include heating silica gel or fumed silica with activated carbon in a reducing atmosphere, the carbon particles being produced in situ in one of the methods. The simplest method to obtain b-SiC nanowires involves heating silica gel with activated carbon at 1360 uC in H2 or NH3. The same reaction, if carried out in the p...

Gallium Nitride (GaN) nanowires were synthesized in two distinct directions <10-10> adirection and <0001> c-direction in a controlled manner using direct nitridation schemes. Field effect transistors based on individual GaN nanowires have been fabricated using the synthesized ‘a’ and ‘c’ direction nanowires. Gate dependent electrical transport measurements performed on the a-direction nanowires...

We demonstrate a modulation of thermoelectric power factor via a radial dopant inhomogeneity in B-doped Si nanowires. These nanowires grown via vapor-liquid-solid (VLS) method were naturally composed of a heavily doped outer shell layer and a lightly doped inner core. The thermopower measurements for a single nanowire demonstrated that the power factor values were higher than those of homogeneo...

Catalyst-free InP nanowires were grown on Si (100) substrates by low-pressure metal organic chemical vapor deposition. The different stages of nanowire growth were investigated. The scanning electron microscopy images showed that the density of the nanowires increased as the growth continued. Catalyzing indium droplets could still be fabricated in the nanowire growing process. X-ray diffraction...

We report here on a theoretical model for the electronic structure and transport properties of superlattice nanowires, considering their cylindrical wire boundary and multiple anisotropic carrier pockets. The thermoelectric properties of superlattice nanowires made of various lead salts ~PbS, PbSe, and PbTe! are investigated as a function of the segment length, wire diameter, crystal orientatio...

Semiconductor nanowires are nanoscale structures holding promise in many fields such as optoelectronics, quantum computing, and thermoelectrics. Nanowires are usually grown vertically on (111)-oriented substrates, while (100) is the standard in semiconductor technology. The ability to grow and to control impurity doping of ⟨100⟩ nanowires is crucial for integration. Here, we discuss doping of s...

Single crystalline cobalt nickel (Co-Ni) alloy nanowires are successfully fabricated using direct current (DC) electrodeposition with in the nanopore of highly ordered anodized aluminum oxide (AAO) template. SEM studies show that the average diameter of the alloy nanowires is approximately equal to 50 nm which corresponds to the pore size of the AAO template. Energy-dispersive X-ray (EDX) analy...

We synthesized thermally stable graphene-covered Ge (Ge@G) nanowires and applied them in field emission devices. Vertically aligned Ge@G nanowires were prepared by sequential growth of the Ge nanowires and graphene shells in a single chamber. As a result of the thermal treatment experiments, Ge@G nanowires were much more stable than pure Ge nanowires, maintaining their shape at high temperature...

Assembly and alignment of nanowires or nanotubes are critical steps for integrating functional nanodevices by the bottom-up strategy. However, it is still challenging to manipulate either an array of nanowires or individual nanowires in a controllable manner. Here we present a simple but versatile method of positioning and aligning nanowires by hydrodynamic focusing that functions as 'hydro-twe...

A high-order discontinuous Galerkin time-domain (DGTD) method for Maxwell’s equations for dispersive media of Drude type is derived and then used to study the coupling of 2D silver nanowires, which have potential applications in optical circuits without the restriction of diffraction limits of traditional dielectric waveguides. We have demonstrated the high accuracy of the DGTD for the electrom...