We present a modeling scheme for simulating ballistic hole transport in thin-body fully depleted silicon-on-insulator pMOSFETs. The scheme includes all of the quantum effects associated with hole confinement and also accounts for valence band nonparabolicity approximately. This simulator is used to examine the effects of hole quantization on device performance by simulating a thin (1.5-nm) and ...

We present a capacitor-type device that can generate strong electrostatic field in condensed phase. The device comprises an ice film grown on a cold metal substrate in vacuum, and the film is charged by trapping Cs(+) ions on the ice surface with thermodynamic surface energy. Electric field within the charged film was monitored through measuring the film voltage using a Kelvin work function pro...

In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrated circuits (ICs) is designed, fabricated and characterized. The proposed device is similar to the conventional LVTSCR but it has an embedded PMOSFET in the anode n-well to enhance the turn on speed, the clamping capability and the robustness. This is possible because the embedded PMOSFET provides...

In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrated circuits (ICs) is designed, fabricated and characterized. The proposed device is similar to the conventional LVTSCR but it has an embedded PMOSFET in the anode n-well to enhance the turn on speed, the clamping capability and the robustness. This is possible because the embedded PMOSFET provides...

This article studied static deflection, natural frequency and nonlinear vibration of a clamped-clamped microbeam under discontinues electrostatic actuation. The electrostatic actuation was induced by applying AC-DC voltage between the microbeam and electrode plate. In contrast to previous works, it was assumed that length of the electrode plate was smaller than that of the microbeam. In additio...

A substrate-triggered technique is proposed to improve electrostatic discharge (ESD) protection efficiency of ESD protection circuits without extra salicide blocking and ESD-implantation process modifications in a salicided shallow-trench-isolation CMOS process. By using the layout technique, the whole ESD protection circuit can be merged into a compact device structure to enhance the substrate...

This paper reports a micromachined Geiger counter with integrated permanent magnets that enhance the RF transmission from the discharges initiated by incident beta particles. With the intent of wireless sensing within the ultra wideband (UWB) spectrum, the transmission in the 2.0-2.8 GHz frequency range is investigated. The device consists of a 1x2 cm micromachined glass/Si cavity sandwiched be...

In this paper, a novel LVTSCR-based device for electrostatic discharge (ESD) protection of integrated circuits (ICs) is designed, fabricated and characterized. The proposed device is similar to the conventional LVTSCR but it has an embedded PMOSFET in the anode n-well to enhance the turn on speed, the clamping capability and the robustness. This is possible because the embedded PMOSFET provides...

Potential control and flow generation have been studied on the Proto-RT device that is equipped with an internal ring coil producing a stationary magnetic field. Biasing the surface of the internal coil, the radial electric field is controlled. Supersonic flow has been generated when the plasma is negatively biased. The present experiment is limited in a low-density (~ 10 m) regime, and hence, ...

Some of the fundamental problems of ultra-small MOSFETs beyond sub-10nm channel length are the electrostatic limits, source-to-drain tunnelling, carrier mobility degradation, process variations, and static leakage. The trend toward ultra-short gate length MOSFETs re‐ quires a more and more effective control of the channel by the gate leading to new device architecture. It appears that non-class...