نتایج جستجو برای: electron scattering

تعداد نتایج: 407432  

Journal: :Physical review letters 1993
Fasol Sakaki

A microscopic picture of electron-electron pair scattering in single mode quantum wires is introduced which includes electron spin. A new source of ‘excess’ noise for hot carriers is presented. We show that zero magnetic field ‘spin’ splitting in quantum wires can lead to a dramatic ‘spin’-subband dependence of electron–electron scattering, including the possibility of strong suppression. As a ...

2014
J. Rajeswari E. Michel H. Ibach C. M. Schneider

The intensity of surface spin wave excitations in inelastic electron scattering is measured as function of electron energy for fcc and hexagonal close packed (hcp) cobalt layers. Intensities are converted into scattering probabilities with the help of a recently established calibration of our spectrometer. The scattering probability as function of energy exhibits a peak around 7 and 3 eV for fc...

2000
Debdeep Jena

A theory of scattering by charged dislocation lines in a two-dimensional electron gas (2DEG) is developed. The theory is directed towards understanding transport in AlGaN/GaN high-electron-mobility transistors (HEMT), which have a large number of line dislocations piercing through the 2DEG. The scattering time due to dislocations is derived for a 2DEG in closed form. This work identifies disloc...

2011
Tian Fang Aniruddha Konar Huili Xing Debdeep Jena

Transport of carriers in two-dimensional graphene at high electric fields is investigated by combining semianalytical and Monte Carlo methods. A semianalytical high-field transport model based on the high rate of optical phonon emission provides useful estimates of the saturation currents in graphene. For developing a more accurate picture, the nonequilibrium (hot) phonon effect and the role of...

2003
A. Bansil

We treat the nonrelativistic Compton scattering process in which an incoming photon scatters from an N-electron many-body state to yield an outgoing photon and a recoil electron, without invoking the commonly used frameworks of either the impulse approximation ~IA! or the independent particle model ~IPM!. An expression for the associated triple differential scattering cross section is obtained ...

Journal: :Ultramicroscopy 2013
Aimo Winkelmann Maarten Vos

In electron scattering from crystals, diffraction spots are replaced by Kikuchi patterns at high momentum transfer. Kikuchi pattern formation is based on the concept of effective incoherent electron sources (or detectors) inside a crystal. The resulting incoherence is a consequence of energy transfer connected with the momentum transfer in large-angle scattering events. We identify atomic recoi...

2001
H. Ness

We present a technique to calculate the transport properties through onedimensional models of molecular wires. The calculations include inelastic electron scattering due to electron-lattice interaction. The coupling between the electron and the lattice is crucial to determine the transport properties in one-dimensional systems subject to Peierls transition since it drives the transition itself....

Journal: :Physical review letters 2004
Ju Gao

The Thomson scattering in an ultraintense ( approximately 10(18) W cm(-2)) and ultrashort (20 fs) laser field is calculated that demonstrates different characteristics from those of the low-intensity field case. The electron trajectory no longer conforms to a figure-eight pattern, and the spectra demonstrate complex shifting and broadening to suggest that Thomson scattering can be used for char...

2015
Debdeep Jena Sten Heikman James S. Speck Arthur Gossard Umesh K. Mishra Oliver Ambacher Walter Schottky

Shubnikov–de-Haas oscillation is observed in a polarization-doped three-dimensional electron slab in a graded AlxGa1!xN semiconductor layer. The electron slab is generated by the technique of grading the polar semiconductor alloy with spatially changing polarization. Temperature-dependent oscillations allow us to extract an effective mass of m*"0.21m0. The quantum scattering time measured (#q"0...

2009
G. Ng D. Vasileska D. K. Schroder

The calculated electron Hall Mobility and Hall scattering factor in n-type 6H-SiC based on numerical solutions to the Boltzmann transport equation are presented. These results were obtained by solving the Boltzmann equation exactly for the electron Hall mobility using the contraction mapping principle and the electron drift mobility with Rode’s iterative method. The relative importance of the v...

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