نتایج جستجو برای: electron beam evaporation

تعداد نتایج: 420104  

Journal: :Zeitschrift fur Naturforschung. Teil B, Chemie, Biochemie, Biophysik, Biologie und verwandte Gebiete 1967
C Brunnée

1964 B E C K E Y reported about a combined field ionisation/electron impact source1 the commercial version of which is shown in Fig. 1 2. Vhe vapour to be analyzed enters the source via an inlet line. However such inlet is suitable only for sampes of not too low volatility. For the qualitative analysis of organic compounds of very low volatility evaporation out of an oven (direct inet) in the i...

Journal: :journal of biomedical physics and engineering 0
m robatjazi tehran university of medical sciences k tanha bushehr university of medical sciences s r mahdavi iran university of medical sciences h r baghani shahid beheshti university h r mirzaei shahid beheshti university of medical sciences m mousavi tehran university of medical sciences

background: one of the main problems of dedicated iort accelerators is to determine dosimetric characteristics of the electron beams. monte carlo simulation of iort accelerator head and produced beam will be useful to improve the accuracy of beam dosimetry. materials and methods: liac accelerator head was modeled using the beamnrcmonte carlo simulation system. phase-space files were generated a...

Journal: :Metals 2021

A feature of radiation-beam technologies is similar processes associated with phase transformations and chemical reactions that cause changes in the volume matter, accompanied by vibroacoustic energy release distributed through equipment flexible system a wide frequency range (up to 40 kHz high for 150 ms). The signal amplitude accompanying depends on power density process performance. accelera...

2008
Wenzhi Lin Jeongihm Pak David C. Ingram Arthur R. Smith

We report a study of the growth of iron nitride on gallium nitride using molecular beam epitaxy with Fe e-beam evaporation and rf N-plasma growth. Thin iron nitride layers of thickness about 16 nm were grown and monitored in-situ using reflection high energy electron diffraction. The samples following growth were analyzed ex-situ using a variety of techniques including x-ray diffraction, Ruther...

1996
Ming Lu A. Bousetta J. A. Schultz

Boron nitride ~BN! thin films ~containing mixed cBN/hBN phase! have been deposited on Si~100! substrates using neutralized nitrogen beam and electron beam evaporation of boron. All as-deposited BN films were p type with a room-temperature carrier concentration in the range of 5310 to 1310 cm. The Mg-doped BN films showed carrier concentrations in the range of 1.2 310 cm to 5.2310 cm when the Mg...

Journal: Journal of Nanoanalysis 2014
G. Murtaza Javaid Ahsan Bhatti M. Khalid Alamgir M. Shoaib M. Zaka Ansar Usman Asghar

Water splitting for hydrogen production under sunlight using TiO2 as photo catalyst provides a better route for solar energy and attracts the attention of many researchers. The photo catalytic activity of TiO2 under sunlight irradiation depends on the band gap energy. The transition metal doped TiO2 shows an edge over TiO2 in optical absorbance and photo catalytic activity. Thin film of Cr dope...

Journal: :Journal of physics 2023

Abstract We determine optical constants of Al 2 O 3 films deposited by electron beam evaporation on a quartz substrate in the spectrum range 0.2-0.8 microns. Refractive index and extinction coefficient are determined spectrophotometric method using reflection transmission spectra. An original correction spectra is used taking into account absorption. The refractive from absorption-free spectra,...

2011
Pietro Artoni Emanuele Francesco Pecora Alessia Irrera Francesco Priolo

Si and Ge have the same crystalline structure, and although Si-Au and Ge-Au binary alloys are thermodynamically similar (same phase diagram, with the eutectic temperature of about 360°C), in this study, it is proved that Si and Ge nanowires (NWs) growth by electron beam evaporation occurs in very different temperature ranges and fluence regimes. In particular, it is demonstrated that Ge growth ...

2002
Aravind Asthagiri Christoph Niederberger Andrew J. Francis Lisa M. Porter Paul A. Salvador David S. Sholl

We have examined the growth of thin Pt films on the polar SrTiO3(111) surface using both experimental and theoretical methods. Pt films were grown on both as-received and treated substrates in a UHV chamber using electron beam evaporation, and they were characterized with x-ray and low-energy electron diffraction and atomic force microscopy. The nature of the substrate surface strongly influenc...

Ashkan Behnam Behzad Esfandiyarpour Ebrahim Asl Soleimani, Fatemeh Dehghan Nayeri, Mohammad Hadi Maleki Shamsodin Mohajerzadeh

Cu-Mo and Cu-Ti contact structures were fabricated on multi-crystalline silicon substrates to provide a low resistance ohmic contact. Deposition steps are done in an excellent vacuum chamber by means of electron beam evaporation and samples are then annealed for the realization of an efficient alloy layer. The effects of process parameters such as film thickness, annealing duration and temp...

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