نتایج جستجو برای: electron backscattering

تعداد نتایج: 312077  

Journal: :Physical review letters 2005
Stefano Roddaro Vittorio Pellegrini Fabio Beltram Loren N Pfeiffer Ken W West

We report current transmission data through a split-gate constriction fabricated onto a two-dimensional electron system in the integer quantum Hall (QH) regime. Split-gate biasing drives interedge backscattering and is shown to lead to suppressed or enhanced transmission, in marked contrast to the expected linear Fermi-liquid behavior. This evolution is described in terms of particle-hole symme...

2000
T. Mayer

We study the production and leptonic decay of charginos in collisions of polarized photon beams including the complete spin correlations. The photons can be generated by Compton backscattering of polarized laser pulses off a polarized electron beam. Since the production process is determined alone by the electromagnetic coupling of the charginos this process allows to study their decay dynamics...

2013
N. Dahbi

The effect of chemical treatment in CdCl2 on the compositional changes and defect structures of potentially useful ZnS solar cell thin films prepared by vacuum deposition method was studied using the complementary Rutherford backscattering (RBS) and Thermoluminesence (TL) techniques. A series of electron and hole traps are found in the various as deposited samples studied. After treatment, pert...

Journal: :The Review of scientific instruments 2017
M Y Wang A D Liu C Zhou J Q Hu H Li T Lan J L Xie W X Ding W D Liu C X Yu

Doppler backscattering systems (DBSs) have been widely used in magnetic confinement fusion devices to measure the density fluctuations and propagation velocity of turbulence. However, the received signals of a DBS usually include both zero-order reflection and backscattering components, which results in interference in calculating the Doppler shift frequency from the backscattering components. ...

Journal: :Physical review letters 2009
Hualing Zeng Hongbo Zhao Fu-Chun Zhang Xiaodong Cui

Single-walled carbon nanotubes (SWCNTs) are quasi-one-dimensional systems with poor Coulomb screening and enhanced electron-phonon interaction, and are good candidates for excitons and exciton-phonon couplings in metallic state. Here we report backscattering reflection experiments on individual metallic SWCNTs. An exciton-phonon sideband separated by 0.19 eV from the first optical transition pe...

Journal: :Physical review letters 2014
Fabrizio Nichele Atindra Nath Pal Patrick Pietsch Thomas Ihn Klaus Ensslin Christophe Charpentier Werner Wegscheider

We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic field. Concomitantly with a local resistance exceeding the resistance quantum by an order of magnitude, we find a pronounced nonlocal resistance signal of almost...

2002
Joachim P. Kloock Yulia G. Mourzina Jürgen Schubert Michael J. Schöning

A first step towards a microfabricated potentiometric thin-film sensor array for the simultaneous detection of Pb, Cd and Cu has been realized. The sensitive layers used are on the basis of chalcogenide glass materials. These thin-film chalcogenide glass materials that consist of mixtures of Pb-Ag-As-I-S, Cd-Ag-As-I-S or Cu-Ag-As-Se have been prepared by pulsed laser deposition technique. The d...

2014
Michael S. Martin N. David Theodore Chao-Chen Wei Lin Shao

Growth of thin crystals on external substrate surfaces by many different methods is a well-known technique, but its extension to inner, enclosed surfaces of large defects in monocrystalline materials has not yet been reported. The literature on thin film growth and defects in materials can be leveraged to fabricate new structures for a variety of applications. Here we show a physical process of...

2001
K. L. Kavanagh W. Mayer W. Magee

Pollycrystalline-Si/GaAs interfaces have been prepared by depositing hydrogenated amorphous Si (a-Si:H) onto GaAs in a silane plasma at 450°C and annealing at temperatures between 600 and 1020 dc. Rutherford backscattering, secondary ion mass spectroscopy, and transmission electron microscopy show that the resulting polycrystaHine-SilGaAs interface is metaBurgically stable when the Si is und.op...

2011
P. Prieto J. de la Figuera J. M. Sanz J. F. Marco

In this paper we have shown the feasibility of ion beam assisted deposition to produce iron–nickel nitride thin films of various compositions. We have carried out their compositional and structural characterization by means of Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and integral conversion electron Mössbauer spectroscopy (ICE...

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