This paper presents a new, simple method of measuring the generation lifetime in SOI (silicon-on-insulator) MOSFETS. Lifetime is extracted from the transient characteristics of MOSFET subthreshold current. Using this technique, generation lifetime was mapped across ®nished SIMOX (separation by implantated oxygen) wafers, BESOI (bonded and etchedback SOI) wafers, and UNIBOND wafers. BESOI materi...

Organometal halide perovskites are promising solar-cell materials for next-generation photovoltaic applications. The long carrier lifetime and diffusion length of these materials make them very attractive for use in light absorbers and carrier transporters. While these aspects of organometal halide perovskites have attracted the most attention, the consequences of the Rashba effect, driven by s...

The temporal response of the electroluminescence at the Si band gap energy from a metal–oxide– silicon ~MOS! tunneling diode is used to characterize the minority carrier lifetime near the Si/SiO2 interface. The temporal responses reveal that the Shockley–Read–Hall ~SRH! recombination lifetimes are 18 and 25.8 ms for the rising and falling edges, respectively, and that the ratio for SRH, radiati...

Thick (150 nm) hydrogenated intrinsic amorphous silicon ((i) a-Si:H) layers, which are deposited with different recipes on crystalline silicon (c-Si) by plasma enhanced chemical vapour deposition (PECVD) are investigated by minority carrier lifetime measurements (τeff) and capacitance-voltage C(V) spectroscopy during thermal treatment. The minority carrier lifetime measurements permit an evalua...

Carrier dynamics in GaN and InGaN/GaN SQW structures were observed by using the transient grating (TG) method with sub-picosecond pulsed laser at room temperature. The diffusion coefficients (D) of photo-created carriers were estimated by the decay rate time of TG signals and the photoluminescence (PL) lifetime. It was found that D depends on the emission wavelength (In composition). The relati...

Parametric Raman nonlinearities in Silicon waveguides is used to demonstrate wavelength conversion from Stokes to anti-Stokes channels. The effects of two photon absorption and free carrier nonlinear losses on the conversion process have also been analyzed. We find that scaling down the waveguide dimensions to submicron sizes is advantageous in terms of increasing the Raman nonlinearities and r...

Recently the implementations of wireless sensor networks have developed immensely. There is one device which is used in wireless sensor networks (WSNs) to increase the lifetime of the network and give very effective functioning process that is clustering. It is the process in which the whole section or part is divided into small parts which understand the domain of sensor network in the directi...

Polarization-resolved four-wave mixing spectroscopy is used to study interwell carrier dynamics in an alternating-strain multiquantum-well optical amplifier. The experimental data are found to be in good agreement with a simple model based on quantum capture/escape and diffusion processes. The results suggest that the interwell transport in this structure is mainly limited by carrier escape, an...

We demonstrate integrated semiconductor optical devices with ultrafast temporal responses based on the plasma-dispersion effect. The geometry of the devices removes the dependence of the modulation time on the free-carrier dynamics. We present the theoretical analysis of the performance of such devices. We show that a silicon-based device with a free-carrier lifetime of 1.4 ns can be modulated ...

We have used transient terahertz photoconductivity measurements to assess the efficacy of two-temperature growth and core-shell encapsulation techniques on the electronic properties of GaAs nanowires. We demonstrate that two-temperature growth of the GaAs core leads to an almost doubling in charge-carrier mobility and a tripling of carrier lifetime. In addition, overcoating the GaAs core with a...