Layered 2D semiconductors have been widely exploited in photodetectors due to their excellent electronic and optoelectronic properties. To improve performance, photogating, photoconductive, photovoltaic, photothermoelectric, other effects used phototransistors photodiodes made with or hybrid structures. However, it is difficult achieve the desired high responsivity linear photoresponse simultan...

We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in programgate at drain (PGAD) and program-gate source (PGAS) configurations. To this end, silicon nanowire (SiNW) FETs are fabricated based on anisotropic wet chemical etching nickel silicidation yielding silicide-SiNW Schottky junctions drain. Whereas PGAD-configuration ambipolar is suppressed, switching d...

In this paper, low threshold voltage (Vt) “natural” transistors, available in some n+/p+ dual poly gate CMOS/ BiCMOS processes [1], are proposed for low voltage switched capacitor circuit design. The impact of the subthreshold off-current of these low devices on the performance of analog switched-capacitor (SC) circuits is analyzed. Methods for reducing the subthreshold offcurrent in analog swi...

We predict that antiferromagnetic bilayers formed from van der Waals (vdW) materials, like bilayer CrI$_3$, have a strong magnetoelectric response can be detected by measuring the gate voltage dependence of Faraday or Kerr rotation signals, total magnetization, anomalous Hall conductivity. Strong effects are possible in single-gate geometries, and dual-gate geometries allow internal electric fi...

The Internet of Things (IoT) is becoming increasingly popular in areas like wearable communication devices, biomedical and home automation systems. IoT-compatible processors or devices need larger integrated memory circuits, static random access (SRAM). design such a with fast times low leakage challenge. In this article, we have proposed 7T SRAM cell using an InGaAs-dual pocket-dual gate-tunne...

Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide family of materials. This two-dimensional semiconductor is characterized by weak interlayer coupling and a distorted 1T structure, which leads to anisotropy in electrical and optical properties. Here we report on the electrical transport study of mono- and multilayer ReS2 with polymer electrolyte gating...

Abstract The threshold voltage of a field-effect transistor (FET) determines its switching and limits the scaling supply in logic gates. Here we demonstrate GaAs FET with monolayer graphene gate which was externally controlled by an additional control gate. forms Schottky junction channel, modulating channel conductivity. sets work function gate, controlling barrier height therefore voltage, re...