A theoretical model for the I-V characteristics of buried-gate GaAs metal semiconductor field-effect transistors has been developed by solving dc continuity equation. This analysis includes the ion implanted buried-gate process. It is shown that the currentvoltage could be rather increased when introducing an optical fiber to the buried-gate GaAs MESFETs structure. The current -voltage characte...

1 Light and quantum information 2 Photons as qubits, phase shifters, beam splitters, polarization rotations, polarizing beam splitters, interferometers. 2 Two-qubit gates and the KLM scheme 6 Two-photon entanglement, the KLM approach, Clifford operations, two-photon interference, Hong-Ou-Mandel effect, fusion gates. 3 Cluster states 13 From circuits to clusters, single-qubit gates, two-qubit ga...