We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning gate potential and twist angle. Remarkably, these topologically ordered states matter, including spin singlet Halperin polarized in number $\mathcal{C}=1$ $\mathcal{C}=2$ bands, occur at high temperatures without need an external magnetic field.

JIN, YAWEI. Simulation Methodology to Compare Emerging Technologies for Alternatives to Silicon Gigascale Logic Device. (Under the direction of Dr. D. W. Barlage). Practical realization of low-power, high-speed transistor technologies for future generation nano-electronics can be achieved with novel structures, such as FinFET, tri-gate or with the integration of exotic channel materials, such a...

In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model predicts different DG MOSEET operation modes and the characteristics, which are well verified by the 2-D numerical simulator in different cases. We also a...

A hetero gate dielectric low band gap material DG Tunnel FET is presented here. The investigated device is almost free from short channel effects like DIBL and t V rolloff. Simulation of the device characteristics shows significant improvement over conventional double gate TFET when compared interms of on current, ambipolar current, roll-off, miller capacitance and, device delay time. Simulatio...