نتایج جستجو برای: doping additive
تعداد نتایج: 93371 فیلتر نتایج به سال:
Doping use is an ongoing problem in contemporary sports. Despite efforts to detect and control doping, research on its etiology is limited, especially among elite-level athletes. The present study used an integrated social cognition model to examine the predictors of doping intentions. Structured anonymous questionnaires were completed by 1075 Greek adult elite-level athletes (M age = 25 years,...
The origin of two luminescence bands with maxima around 1.05 eV and 0.95 eV is studied in silicon pn diodes prepared by boron implantation. The two peaks are related to the formation of p-type doping spikes on a nanometer scale. These doping spikes are generated by long-time thermal activation of preformed boron clusters. The peak with a larger binding energy stems from spatially indirect excit...
Controlling axial and radial dopant profiles in nanowires is of utmost importance for NW-based devices, as the formation of tightly controlled electrical junctions is crucial for optimization of device performance. Recently, inhomogeneous dopant profiles have been observed in vapor–liquid–solid grown nanowires, but the underlying mechanisms that produce these inhomogeneities have not been compl...
Storing and transporting of urine samples for doping analysis, as performed by the anti-doping organizations associated with the World Anti-Doping Agency, does not include a specific protocol for cooled transport from the place of urine sampling to the doping laboratory, although low cost cooling facilities can easily be made available. As a result, microbial and thermal degradation of the chem...
Tunneling measurements are performed on Carich single crystals of Bi2Sr2CaCu2O8+δ (Bi2212), with various oxygen doping levels, using a novel point contact method. At 4.2 K, SIN and SIS tunnel junctions are obtained with well-defined quasiparticle peaks, robust dip and hump features and in some cases Josephson currents. The doping dependence of tunneling conductances of Ca-rich Bi2212 are analyz...
Mg2NiH4 is a promising hydrogen storage material with fast de hydrogenation kinetics. Its hydrogen desorption enthalpy, however, is too large for practical applications. In this paper we study the effects of transition metal doping by first-principles density functional theory calculations. We show that the hydrogen desorption enthalpy can be reduced by 0.1 eV/H2 if one in eight Ni atoms is rep...
Atomically thin films of layered materials such as molybdenum disulfide (MoS2) are of growing interest for the study of phase transitions in two-dimensions through electrostatic doping. Electrostatic doping techniques giving access to high carrier densities are needed to achieve such phase transitions. Here we develop a method of electrostatic doping which allows us to reach a maximum n-doping ...
A medical and scientific multidisciplinary consensus meeting was held from 29 to 30 November 2013 on Anti-Doping in Sport at the Home of FIFA in Zurich, Switzerland, to create a roadmap for the implementation of the 2015 World Anti-Doping Code. The consensus statement and accompanying papers set out the priorities for the antidoping community in research, science and medicine. The participants ...
Conducted researches recognize various risk factors, as well as protective factors against doping behaviour in different sports i.e. sports disciplines or activities. The main goal of this research was to identify the correlation between selected socio-demographic, health-related, and sports-related predictors with doping factors in three different types of sports, which are (1) highly energeti...
Impurity-based p-type doping in wide-band-gap semiconductors is inefficient at room temperature for applications such as lasers because the positive-charge carriers (holes) have a large thermal activation energy. We demonstrate high-efficiency p-type doping by ionizing acceptor dopants using the built-in electronic polarization in bulk uniaxial semiconductor crystals. Because the mobile hole ga...
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