نتایج جستجو برای: dimensional fet model

تعداد نتایج: 2410851  

2014
Hideki Okamoto Ritsuko Eguchi Shino Hamao Hidenori Goto Kazuma Gotoh Yusuke Sakai Masanari Izumi Yutaka Takaguchi Shin Gohda Yoshihiro Kubozono

A new phenacene-type molecule, [8]phenacene, which is an extended zigzag chain of coplanar fused benzene rings, has been synthesised for use in an organic field-effect transistor (FET). The molecule consists of a phenacene core of eight benzene rings, which has a lengthy π-conjugated system. The structure was verified by elemental analysis, solid-state NMR, X-ray diffraction (XRD) pattern, abso...

1994
D. R. Webster David G. Haigh Anthony E. Parker

to reprint or re-publish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retain...

Journal: :Science 2003
Zhaohui Zhong Deli Wang Yi Cui Marc W Bockrath Charles M Lieber

The development of strategies for addressing arrays of nanoscale devices is central to the implementation of integrated nanosystems such as biological sensor arrays and nanocomputers. We report a general approach for addressing based on molecular-level modification of crossed semiconductor nanowire field-effect transistor (cNW-FET) arrays, where selective chemical modification of cross points i...

Journal: :Physical chemistry chemical physics : PCCP 2014
Byoungnam Park Kevin Whitham Kaifu Bian Yee-Fun Lim Tobias Hanrath

We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface lig...

Journal: :IEICE Transactions 2011
Jongseung Hwang Heetae Kim Jae-Hyun Lee Dongmok Whang SungWoo Hwang

We have investigated the effect of deoxyribonucleic acid (DNA) adsorption on a graphene field-effect-transistor (FET) device. We have used graphene which is grown on a Ni substrate by chemical vapour deposition. The Raman spectra of our graphene indicate its high quality, and also show that it consists of only a few layers. The current-voltage characteristics of our bare graphene strip FET show...

2017
Cheol-Min Lim In-Kyu Lee Ki Joong Lee Young Kyoung Oh Yong-Beom Shin Won-Ju Cho

This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior elec...

Journal: :Nanotechnology 2010
Daeha Joung A Chunder Lei Zhai Saiful I Khondaker

We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets. The RGO sheets suspended in water were assembled between prefabricated gold source and drain electrodes using ac dielectrophoresis. With the application of a backgate voltage, 60% of the devices showed p-type FET behavior, while the remaining 40% showed ambipolar behavio...

Journal: :Annals of cardiothoracic surgery 2013
Axel Haverich

Current scientific evidence suggests the frozen elephant trunk (FET) technique plays an important role in modern aortic arch repair operations, both for aneurysmal disease and acute aortic dissection. Its use in extended aneurysm is generally therapeutic, aiming for complete exclusion of the diseased descending thoracic aorta. In acute aortic dissection type A, the application of FET is more pr...

Journal: :IEICE Electronic Express 2010
Koichi Narahara Shun Nakagawa

We investigated the properties of pulse propagation on nonlinear traveling-wave field effect transistors (TW-FET) to develop a method for amplifying short electrical pulses. TW-FETs are a special type of FET whose electrodes are employed not only as electrical contacts but also as transmission lines. Due to the presence of electromagnetic couplings between the gate and drain lines, two differen...

2017
Sied Kebir Zain Khurshid Florian C. Gaertner Markus Essler Elke Hattingen Rolf Fimmers Björn Scheffler Ulrich Herrlinger Ralph A. Bundschuh Martin Glas

RATIONALE Timely detection of pseudoprogression (PSP) is crucial for the management of patients with high-grade glioma (HGG) but remains difficult. Textural features of O-(2-[18F]fluoroethyl)-L-tyrosine positron emission tomography (FET-PET) mirror tumor uptake heterogeneity; some of them may be associated with tumor progression. METHODS Fourteen patients with HGG and suspected of PSP underwe...

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