The structure of the flexible IGZO TFTs was deposited on PET substrates using a magnetron radio frequency co-sputtering system at a low temperature. The resulting flexible IGZO TFTs exhibited the lower subthreshold swing value of 0.25 V/decade and the higher field-effect mobility of 24.4 cm/V-s. The field-effect mobility stability was measured by a bending radius of 1.17 cm under stress time fo...

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-vo...

We demonstrate a water-immersible thin film lead zirconate titanate, Pb(Zr,Ti)O3, [PZT] actuator, without special passivation layer, towards in-vivo or in-vitro scanning probe microscope (SPM) measurements of living cells in water or biological fluids. In order to be water-immersible, the electrodes need to be electrically insulated and the piezoelectric layer needs to be protected against dire...

Plasma-induced etching of dielectric thin films is widely used in ~ntegratedcircuit preparation technology. It normally involves the interaction of gas discharge species with a thin-film surface in order to produce volat~le reaction products. The ultimate goal is to etch through a frlm in a spatially selective manner and to thereby generate a desired pattern. This process also occurs unintentio...

Large arrays of n-channel organic thin film transistors of a core-chlorinated naphthalene diimide were processed by solution shearing on a silicon dioxide dielectric exhibiting ambient stable electron mobilities of up to 0.95 cm(2) V(-1) s(-1). Under bias stress an increase in effective charge carrier mobility of up to 4.26 cm(2) V(-1) s(-1) has been observed.

The frequency-dependent group delay of dielectric mirrors was measured by spectrally resolved white-light interferometry. Chirped mirrors and thin-film Gires-Tournois interferometers designed for dispersion control in a femtosecond Ti:sapphire laser oscillator-amplifier system were tested with a group-delay resolution of +/-0.2 fs and a spectral resolution of ~1 nm over the spectral range of 67...

Optical anisotropy in single-walled carbon nanotube thin film networks is reported. We obtain the real and imaginary parts of the in-(parallel) and out-of-plane (perpendicular) complex dielectric functions of the single-walled carbon nanotube (SWNT) thin films by combining transmission measurements at several incidence angles with spectroscopic ellipsometry data on different substrates. In spar...

Optical properties and thermal stability of the solar selective absorber based on the metal/dielectric four-layer film structure were investigated in the variable temperature region. Numerical calculations were performed to simulate the spectral properties of multilayer stacks with different metal materials and film thickness. The typical four-layer film structure using the transition metal Cr ...

The thickness and spectral dependence of the complex refractive index of upper layer in thin-film MBE-grown GaAs heterostructures were calculated basing on a classical oscillatory model of dielectric function from spectra measured by spectroscopic ellipsometry (nondestructive, contactless optical method) in the range of 1.5-4.75 eV.

We examine the photo-assisted polarization loop in a BiFeO3 thin film under UV light illumination. BiFeO3 thin film prepared by pulsed laser deposition method onto the BaTiO3 thin film and the polarization behavior has been measured under poling voltage. Our results show the engineered polarization due to controllable schottky barrier under inverse poling voltage. This control on schottky barri...