Reduced performance in Gallium Nitride (GaN)based high electron mobility transistors (HEMTs) as a result of self-heating has been well-documented. A new approach, termed “diamond-before-gate,” is shown to improve the thermal budget of the deposition process and enables large-area diamond without degrading the gate metal. NCD-capped devices had a 20% lower channel temperature at equivalent power...

Molecular dynamics simulations of ultrathin water film confined between atomically flat rigid diamond plates are described. Films with thickness of one and two molecular diameters are concerned and TIP4P model is used for water molecules. Dynamical and equilibrium characteristics of the system for different values of the external load and shear force are investigated. An increase of the externa...

Deposition processes control the properties of thin films; they can also introduce high residual stresses, which can be relieved by delamination and fracture. Tungsten films with high 1–2 GPa compressive residual stresses were sputter deposited on top of thin (below 100 nm) copper and diamond-like carbon (DLC) films. Highly stressed films store large amounts of strain energy. When the strain en...

Diamond Like Carbon (DLC) films were deposited on quartz substrates using Dense Plasma Focus (DPF) method. The formation of sp bonds as is it’s content in the film strongly depends on the substrate and it seems quartz is not a suitable substrate. However, we report here the formation of DLC films on quartz substrates that were maintained at elevated temperatures and show the content of carbon a...

Thin films, used in various applications and devices, must strongly adhere to their substrates. Due to various processing and storage environments that devices can be exposed to, water may be introduced into the system. If residual stresses are present in a thin film, delamination propagation can be driven by water without the assistance of an externally applied mechanical force. It is extremel...

We present a method for simulating the chemical vapor deposition ~CVD! of thin films. The model is based upon a three-dimensional representation of film growth on the atomic scale that incorporates the effects of surface atomic structure and morphology. Film growth is simulated on lattice. The temporal evolution of the film during growth is examined on the atomic scale by a Monte Carlo techniqu...

The presence of thin silicon carbide intermediate layers on silicon substrates during nucleation and the early stages of diamond deposition have been frequently reported. It is generally accepted that the intermediate layer is formed by the bulk diffusion of carbon atoms into the silicon carbide layer, and the morphology and orientation of the diamond film subsequently grown on the intermediate...

Diamond wire sawing is one of the most widely used methods cutting Al2O3 ceramic because it has good machining accuracy and causes less surface damage. However, its material removal rate (MRR) needs to be improved with increasing demand for parts. In this paper, spark discharges are generated around diamond based on electrochemical discharge (ECDM) process. An oil film-assisted ECDM process app...

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