In this work, the titanium nitride (TiN) thin films were prepared on Si-wafers by using DC reactive magnetron sputtering from a pure target. The influence of N2 flow rates, in range 1.0-4.0 sccm, as-deposited TiN film’s structure was characterized several techniques. (i) crystal structures studied GI-XRD. (ii) thicknesses, microstructures, and surface morphologies analyzed FE-SEM. (iii) element...