The threshold voltage value, which is the most important electrical parameter in modeling MOSFETs, can be extracted from either measured drain current or capacitance characteristics, using a single or more transistors. Practical circuits based on some of the most common methods are available to automatically and quickly measure the threshold voltage. This article reviews and assesses several of...

Copper has been investigated as a potential interlayer material for diffusion bonds between beryllium and Reduced Activation Ferritic/Martensitic (RAFM) steel. Utilizing Hot Isostatic Pressing (HIP), copper was directly bonded to a RAFM steel, F82H, at 650 C, 700 C, 750 C, 800 C and 850 C, under 103 MPa for 2 h. Interdiffusion across the bonded interface was limited to 1 lm or less, even at the...

Synthesis of copper-telluride nanowires has been carried out using template-assisted electrodeposition technique. The polycarbonate template is supported on a copper substrate. The synthesized nanowires were characterized using scanning electron microscopy (SEM) and X-ray diffractometer (XRD). The SEM image has confirmed the satisfactory deposition of the CuTe nanowires having 100 nm diameters ...

Delamination of prestressed thin films on thick substrates is analysed accounting for plastic dissipation in either the substrate or film. Emphasis is on large scale yielding wherein the height of the plastic zone at the propagating interface crack tip is comparable to the film thickness. Such conditions are common for both metal and polymer thin films on elastic substrates or for ceramic coati...

A stripping method for the determination of hypoxanthine in the presence of copper at the submicromolar concentration levels is described. The method is based on controlled adsorptive accumulation of hypoxanthine-copper at the thin-film mercury electrode followed by a fast linear scan voltammetric measurement of the surface species. Optimum experimental conditions were found to be the use of 1....

″Ultrathin″ metallization layers on the order of nanometers in thickness are increasingly used in semiconductor interconnects and other nanostructures. Aqueous deposition methods are attractive methods to produce such layers due to their low cost, but formation of ultrathin layers has proven challenging, particularly on oxide-coated substrates. This work focused on the formation of thin copper ...

We report direct observation of a "Pac-Man" like coarsening mechanism of a self-supporting thin film of nickel oxide. The ultrathin film has an intrinsic morphological instability due to surface stress leading to the development of local thicker regions at step edges. Density functional theory calculations and continuum modeling of the elastic instability support the model for the process.

Article history: Received 11 January 2012 Received in revised form 27 March 2012 Accepted 25 April 2012 Available online 26 May 2012 0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.04.017 ⇑ Corresponding author. E-mail address: [email protected] (A. Cerdeir In this work we present a procedure for modeling the characteristics of amorphous oxide sem...

Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe ...

The behavior of a thin-film GeTe crystal induced by intense femtosecond laser pulses ( $$\lambda = 0.8{\kern 1pt} $$ μm) has been studied using pulsed electron diffractometer. sample is an annealed 20-nm film on copper grid with carbon coating. It found that ablation results in the formation ultrathin (assumingly, monolayer) high radiation resistance. Possible reasons for detected nanosize effe...