Wet anisotropic etching based silicon micromachining is an important technique to fabricate freestanding (e.g. cantilever) and fixed (e.g. cavity) structures on different orientation silicon wafers for various applications in microelectromechanical systems (MEMS). {111} planes are the slowest etch rate plane in all kinds of anisotropic etchants and therefore, a prolonged etching always leads to...

In the last decade, diamond single crystals have become valuable monochromators for high-heat-load X-ray synchrotron beamlines. However, due to imperfections in the diamond, the rocking curves of diamond crystals are wider (e.g, 30%) than the theoretical values. Proper etching of the diamond can reduce the effects of imperfections. We explore four etching techniques using synthetic diamonds of ...

The laser-induced chemical etching mechanism of Cr–O doped GaAs (1 0 0) substrate in 40% HF-H2O solution is explained by the generation of e–h pairs through defect states in the presence of sub-bandgap photon illumination by using a Nd:YAG Laser (λ ∼ 1.06 m). The central feature of the laser etching technique is pits initiation by surface defects. The etched GaAs samples are characterised by ph...

Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films usi...

Complex metal-organic frameworks used as precursors allow design and construction of various nanostructured functional materials which might not be accessible by other methods. Here, we develop a sequential chemical etching and sulfurization strategy to prepare well-defined double-shelled zinc-cobalt sulfide (Zn-Co-S) rhombic dodecahedral cages (RDCs). Yolk-shelled zinc/cobalt-based zeolitic im...

NATURE | VOL 400 | 5 AUGUST 1999 | www.nature.com 547 J. Chem. Phys. 108, 5888±5897 (1998). 26. MacGorman, D. R. & Rust, W. D. The Electrical Nature of Storms 32 (Oxford Univ. Press, New York, 1998). 27. Pruppacher, H. R. & Klett, J. D. Microphysics of Clouds and Precipitation 813±814 (Kluwer Academic, Dordrecht, 1996). 28. Di Palma, T. M., Latini, A., Satta, M. & Giardini Guidoni, A. Molecular...

We demonstrate the evolution of the Bragg gratings inscribed in Panda fibers with chemical etching. The resonance wavelengths can blueshift with cladding reduction similar to the conventional counterparts. But the wavelength separation between the two polarizations is co-determined by the stress and the asymmetric shape effects. The fast and slow axes of the fiber can be reversed with each othe...

Intercalation of oxygen at the interface of graphene grown by chemical vapour deposition and its polycrystalline copper catalyst can have a strong impact on the electronic, chemical and structural properties of both the graphene and the Cu. This can affect the oxidation resistance of the metal as well as subsequent graphene transfer. Here, we show, using near ambient pressure X-ray photoelectro...

This article describes results obtained using various plasma and surface diagnostics in a study of inductively coupled fluorocarbon plasmas in which the amount of capacitive coupling was systematically varied. It is found that the plasma density decreases while the electron temperature increases as the amount of capacitive coupling is increased at a constant source power level. The rate at whic...

We demonstrate the fabrication of the large-area arrays of vertically aligned Si/SiO2 nanowires with full tunability of the geometry of the single nanowires by the metal-assisted chemical etching technique and the following thermal oxidation process. To fabricate the geometry controllable Si/SiO2 nanowire (NW) arrays, two critical issues relating with the size control of polystyrene reduction a...