We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometerscale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET with a carrier signal at its resonance frequency, small signals at the transistor’s gate modulate t...

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Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120 meV and 200 meV lower optical...

In this study, the properties of optically excited silicon were investigated using terahertz time-domain spectroscopy (THz-TDS). The surface was illuminated with 365-nm ultraviolet (UV) light to excite charge carriers, and properties such as conductivity, charge carrier density and mobility were evaluated. The illumination effect significantly changed the conductivity as well as the surface rec...

The low dielectric constants of conventional organic semiconductors leads to poor charge carrier photogeneration in homojunction organic solar cells due to large exciton binding energies. Increasing the dielectric constant can potentially enhance the spontaneous exciton dissociation rate at room temperature in homojunction cells, and decrease the charge carrier recombination in heterojunction s...

We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface lig...

Charge transport in organic materials as a function of carrier concentration is investigated. An analytical model of the concentration dependent obility based on the variable hopping range theory is formulated. This model is applied to analyze the discrepancy between the experimental obilities extracted from FETs and LEDs. The result shows that an exponential density of states (DOS) is a good a...

Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS2 sheets over a wide range of carrier densities realized by a c...