The n + CdS-nCdS-nSi structures were obtained, and their volt-ampere characteristics at different temperatures studied. dependence of the characteristic shows that sublinear quadratic section these has a current growth with voltage. It is determined in flow direction low illumination levels work as an injection photodiode. And under laser λ=0.625 μm power P=1.2 µW/cm 2 have spectral sensitivity...

Nano Cd0.9Mg0.05S was synthesized applying the thermolysis technique in air and under flow of nitrogen. Samples obtained exhibited CdS structure with two phases. Rietveld refinement analysis used to determine different parameters. Analysis UV–Vis absorption spectra disclosed that optical band gap sample prepared N2 is less than corresponding air. The (air) decreased as it doped Mg while increas...

A dip-pen nanolithography (DPN) process capable of depositing nanoscaled structures of semiconducting CdS materials was developed by careful control of the reaction speed between the precursors. The new development expanded the scope of the powerful DPN process and provided more insight in the deposition mechanism. Features ranging from several hundreds of nanometers to sub-50 nanometers were g...

In response to a range of Cd concentrations, the root tips of Cd-tolerant plants of Silene vulgaris exhibit a lower rate of PC production accompanied by a lower rate of longer chain PC synthesis than those of Cd-sensitive plants. At the same Cd exposure level, stable PC-Cd complexes are more rapidly formed in the roots of Cd-sensitive plants than in those of tolerant plants. At an equal PC conc...